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| Boron and boron-rich boride has attracted considerable attention in the past few years for their wide varieties of structures and property associated with their unusual three-center electron-deficient bonds. Boron film also exhibits many unique and fascinating properties, such as high melting point (~ 2500K) with low density, high harness close to diamond, and excellent thermoelectric property. In this paper, boron (10B) films were prepared on (100) silicon substrate by radio frequency (RF) magnetron sputtering method. The influence of working power on the properties of boron films were studied by using surface profiler, scanning electron microscopy (SEM), FTIR spectrum (FTIR) and Raman spectrum (Raman). The results show that the content of B in the films increases with the increasing working power.
In this paper, boron (10B) films were prepared on (100) silicon substrate by radio frequency (RF) magnetron sputtering method. The influence of working power on the properties of boron films were studied by using surface profiler, scanning electron microscopy (SEM), FTIR spectrum (FTIR) and Raman spectrum (Raman). The results show that the content of B in the films increases with the increasing working power. |
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| Keywords:thin film technology; RF magnetron sputtering; boron films; working power |
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