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Effects of Zr ions substitution on microstructures and electrical properties of Bi3.15Nd0.85Ti3O12 films
Liao Hui ,Zhong Xiangli #,Liao Min,Wang Jinbin, ZhouYichui *
Faculty of Materials, Optoelectronics and Physics , Xiangtan University
*Correspondence author
#Submitted by
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Funding: 国家自然科学基金,教育部科技创新工程重大项目培育资金项目,教育部博士点基金（No.,,）
Opened online:12 December 2008
Accepted by: none
Citation: Liao Hui ,Zhong Xiangli,Liao Min.Effects of Zr ions substitution on microstructures and electrical properties of Bi3.15Nd0.85Ti3O12 films[OL]. [12 December 2008] http://en.paper.edu.cn/en_releasepaper/content/26568
 
 
Thin films of Bi3.15Nd0.85Ti3O12 (BNT) and Bi3.15Nd0.85Ti3-xZrxO12 (BNTZx， x=0.1 and 0.2) were fabricated on Pt/TiO2/SiO2/Si(100) substrates by a chemical solution deposition (CSD) technique. Structures and electrical properties of the films were studied as a function of Zr ions composition. Experimental results indicate that a small amount of Zr ions substitution in BNT can improve electrical properties and surface morphology of the film. The double remanent polarization (2Pr) and root-mean-square (rms) roughness of BNTZ0.1 film are 52.7 μC/cm2 and 9.461 nm, respectively.
Keywords:ferroelectric thin films;electrical properties;chemical solution deposition
 
 
 

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