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P-FMEA improvement of CMP Micro-scratch
Cao Xiongwei * #
School of Microelectronic, Shanghai JiaoTong University
*Correspondence author
#Submitted by
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Funding: none
Opened online: 5 January 2010
Accepted by: none
Citation: Cao Xiongwei .P-FMEA improvement of CMP Micro-scratch[OL]. [ 5 January 2010] http://en.paper.edu.cn/en_releasepaper/content/38474
 
 
Micro-scratch is a major defect for oxide CMP(including STI/ILD/IMD CMP), serious micro-scratch would form W Puddle, which will make metal short and then cause yield loss. So far no robust method can avoid this issue. Based on P-FMEA theory, do improvement at severity, detection and occurrence three aspects: add process time at post WCMP to decrease micro-scratch impact, making a robust monitor control method to robust detect this issue early and study a method to decreasing the occurrence of this issue. By all of the efforts, Micro-scratch issue at CMP process has much improvement.
Keywords:CMP;Micro-scratch;P-FMEA
 
 
 

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