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| The dependence of multiple-scattering extended x-ray absorption fine structure (MS-EXAFS) effects on the nearest neighbors for GaP, GaAs and GaSb semiconductors with zinc blende structure has been investigated in this work. The overall MS contributions increase rapidly as the nearest neighbors around Ga atoms
going from P to As and Sb. The MS effects within the first three coordination shells are dominated by a triangle double-scattering path DS2 (Ga0 B1 B2 Ga0) which
contributes an EXAFS signal destructively interfering with that of the second shell single-scattering path (SS2). For GaP with a light element as the first neighbor, its MS
contributions are negligible with respect to the SS2 contribution. For GaAs (or GaSb) with a heavier element As (or Sb) as the first neighbor, the MS path of DS2 produces a strong EXAFS oscillation. Based on these results, we present an optimized and simplified MS-EXAFS method for analyzing the higher shell local structure of III-V
semiconductors with zinc blende-like structure. |
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| Keywords:MS-EXAFS, local structure, III-V semiconductors |
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