Structural and optical properties of Cr-doped semi-insulating GaN epilayers

Mei Fei; Wu Kemin; Pan Yang; Han Tao; Liu Chang

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Structural and optical properties of Cr-doped semi-insulating GaN epilayers

Mei Fei #,Wu Kemin,Pan Yang,Han Tao,Liu Chang * #

Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, and Department of Physics， WuHan University

*Correspondence author

#Submitted by

Subject:

Funding: 教育部博士点基金（No.20060486047）

Opened online:24 March 2010

Accepted by: none

Citation: Mei Fei ,Wu Kemin,Pan Yang.Structural and optical properties of Cr-doped semi-insulating GaN epilayers[OL]. [24 March 2010] http://en.paper.edu.cn/en_releasepaper/content/41068

The properties of Cr-doped semi-insulating GaN epilayers grown by rf-plasma-assisted molecular beam epitaxy were studied. The deep acceptor nature of Cr was used to grow semi-insulating GaN epilayers on sapphire substrates for electronic device applications. The room-temperature (RT) sheet resistivity of the epilayers reached 1010 Ω/square. The activation energy of the dark conductivity was about 0.48 eV. Step-graded AlxGa1-xN/GaN (x=0.3-0.2) superlattices (SLs) were designed to filter dislocations. Transmission electron microscopy images showed that the SLs can dramatically reduce the dislocation density. Al0.35Ga0.65N/GaN heterostructure grown on the Cr-doped semi-insulating GaN epilayer exhibited a RT mobility of 960 cm2/Vs and sheet carrier density of 2.1×1013 cm-2.

Keywords:Cr-doped;semi-insulating GaN epilayer;superlattices;molecular beam epitaxy

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