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Potential Sputtering of Highly Charged Ions on Copper and Tungsten Surfaces
Wang Tieshan 1,Ding Jingjie 1 *,Cheng Rui 2,Lu Xia 1,Zhao Yongtao 2
1.School of Nuclear Science and Technology, Lanzhou University
2.Institute of Morden Physics, Chinese Academy of Science
*Correspondence author
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Funding: Natural Science Foundation of China(No.10475035)
Opened online:10 December 2010
Accepted by: none
Citation: Wang Tieshan,Ding Jingjie,Cheng Rui.Potential Sputtering of Highly Charged Ions on Copper and Tungsten Surfaces[OL]. [10 December 2010] http://en.paper.edu.cn/en_releasepaper/content/4395166
 
 
The sputtering yields for copper (Cu) and tungsten (W) targets bombarded by Arq+ (1≤q≤16) and Pbq+ (4≤q≤36) ions were measured. The threshold effect was found for the potential sputtering on metals in this work. The sputtering yields remain constant when q<24, however, they grow dramatically with the charge state q when q≥24. For comparison, the sputtering yields on insulator (SiO2) and semiconductor (Si) were also studied. It increases almost linearly with q in Pbq+ impact case. It is considered that the potential sputtering is strongly dependent on the target material properties, especially the conductivity.
Keywords:Surface Modification; Potential Sputtering; Threshold effect; Conductivity
 
 
 

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