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Electronic structures of tunnel barrier MgAl2O4: First-principles study
Zhang Delin,Xu Xiaoguang * #,Jiang Yong
School of Materials Science and Engineering, University of Science and Technology Beijing
*Correspondence author
#Submitted by
Subject:
Funding: Ph.D. Programs Foundation （No.No. 20070008024）
Opened online:14 December 2010
Accepted by: none
Citation: Zhang Delin,Xu Xiaoguang,Jiang Yong.Electronic structures of tunnel barrier MgAl2O4: First-principles study[OL]. [14 December 2010] http://en.paper.edu.cn/en_releasepaper/content/4395914
 
 
The electornic structures of tunnel barrier material, Spinel MgAl2O4 were calculated by the first-principles calculations based on the density functional theory. The results show that MgAl2O4 and MgO have the similar electronic structures.The valence bands are separated with the conduction band by a direct energy gap of 5.3 eV for MgAl2O4 and 4.7 eV for MgO at the Γ-point. Therefore, the spinel MgAl2O4 can substitute MgO and lead to high coherent tunneling and chemically stable epitaxial magnetic tunnel junction structures, which will be applied in the future read hand and other spintronic devices. In addition, due to the cation vacancy, the weak ferromagnetic spinel MgAl2O4 will bring new physical phenomenon in spintronics.
Keywords:magnetic tunnel junctions; spinel MgAl2O4; spintronic devices; First-principles
 
 
 

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