Optimal design of active region for high power 670 nm GaInP/AlGaInP laser diodes

LIN Nan; LIN Tao; MA Xinjian

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Optimal design of active region for high power 670 nm GaInP/AlGaInP laser diodes

LIN Nan 1 #,LIN Tao 2 *,MA Xinjian 2

1.Automation and Information Engineering School,Xi\'an University of Technology

2.Automation and Information Engineering School,Xi'an University of Technology,Xi'an,710048

*Correspondence author

#Submitted by

Subject:

Funding: Science and Technology Research Foundation of Shaanxi Educational Committee（No.No. 09JK630）, Research Fund for the Doctoral Program of Higher Education of China （No.No. 20096118120009）

Opened online: 7 April 2011

Accepted by: none

Citation: LIN Nan,LIN Tao,MA Xinjian.Optimal design of active region for high power 670 nm GaInP/AlGaInP laser diodes[OL]. [ 7 April 2011] http://en.paper.edu.cn/en_releasepaper/content/4419469

A detailed simulation of high power 670nm GaInP/AlGaInP oxide striped laser diode was presented based on the combination of GaInP quantum well width with waveguide thickness. The simulation parameter of background loss was 1500/cm calibrated with the experimental results. As the well width was changed, the well composition should be changed to maintain the fixed wavelength in these devices. In the simulating results of the LDs with 100um current injection region and 900um cavity length, the threshold currents were found firstly decreasing and then increasing with decreasing of quantum well width and waveguide thickness, and a minimum threshold current of 200mA was achieved at a 5nm width GaInP well. While the waveguide had less affection on the threshold current in the thickness ranging from 50nm to 110nm.

Keywords:optoelectronic; AlGaInP; threshold current; 670nm; gain spectrum

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