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Physical Modeling of On-chip Sub-nH Spiral Inductor
Yang Kang #,Yan Na *
ASIC & System State Key Laboratory, Fudan University
*Correspondence author
#Submitted by
Subject:
Funding: Doctoral Program of Higher Education of China（No.No.20100071120026）, National Natural Science Foundation of China （No.No.61076028）
Opened online:29 July 2011
Accepted by: none
Citation: Yang Kang ,Yan Na .Physical Modeling of On-chip Sub-nH Spiral Inductor[OL]. [29 July 2011] http://en.paper.edu.cn/en_releasepaper/content/4436244
 
 
In this paper, a new physical model for sub-nH spiral inductors in CMOS integrated circuits (IC) design is developed. Based on physical analysis of on-chip inductors' high frequency effects, П topology with RLC elements is adopted to capture the lumped characteristics of on-chip sub-nH spiral inductor. The interconnects between inductors and other devices are incorporated into the proposed model, which simplifies the circuit and layout design. The new model demonstrates a good agreement with measured S-parameter within 40GHz through analytical calculation and data fitting. Finally, the proposed inductor model is employed in a 20-GHz 4.8dB-NF low noise amplifier (LNA) design for accurate circuit simulation.
Keywords:IC design; on-chip inductors; sub-nH; model; interconnect; LNA
 
 
 

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