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Response properties of photovoltaic detectors irradiated under femtosecond pulses
Dong Zhiwei 1 * #,Su Shuheng 2,Lv Kun 2,Xia Yuanqin 2,Chen Deying 2
1.National Key Laboratory of Science and Technology on Tunable laser, Harbin Institute of Technology, Harbin 150001
2.National Key Laboratory of Science and Technology on Tunable laser, Harbin Institute of Technology
*Correspondence author
#Submitted by
Subject:
Funding: Development Program for Outstanding Young Teachers in Harbin Institute of Technology (No.HITQNJS.2009.003), National Natural Science Foundation of China (No.No. 11004042), the Research Fund for the Doctoral Program of Higher Education(No.RFDP20102302120022), relative foundation from Harbin city (No.2011RFQXG003)
Opened online:22 November 2011
Accepted by: none
Citation: Dong Zhiwei,Su Shuheng,Lv Kun.Response properties of photovoltaic detectors irradiated under femtosecond pulses[OL]. [22 November 2011] http://en.paper.edu.cn/en_releasepaper/content/4450059
 
 
Output properties of Si based photovoltaic detectors were researched applying femtosecond pulses with different repetition rates. The output properties of these detectors with different load conditions were also researched. The linear response domain of PIN detector with external reverse bias voltage was found quite large for different femtosecond pulses repetition rates. The sensitivity of PN detector was found much higher when applying external reverse bias voltage with femtosecond repetition rate 76 MHz. The saturation effect of PN detector was attributed to the slow response speed of the photovoltaic detector.
Keywords:Physical Electronics; femtosecond; detectors; photovoltaic
 
 
 

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