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Electric fatigue in metal/ferroelectric polymer/SiO2/p-Si capacitors
Zhang Jihao,Zhu Guodong * #
Department of Materials Science, Fudan University
*Correspondence author
#Submitted by
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Funding: National Natural Science Foundation of China （No.Nos. 10804020, 60976074, 61076068), Specialized Research Fund for the Doctoral Program of Higher Education）
Opened online: 1 February 2012
Accepted by: none
Citation: Zhang Jihao,Zhu Guodong.Electric fatigue in metal/ferroelectric polymer/SiO2/p-Si capacitors[OL]. [ 1 February 2012] http://en.paper.edu.cn/en_releasepaper/content/4462915
 
 
In recent years ferroelectric polymer-based nonvolatile memory devices have attracted much attention due to their flexibility, transparency and ease of production. However, their electrical stability is seldom studied. Here we report the observation of electric fatigue in metal/ferroelectric polymer/SiO2/p-Si capacitor memories, which is compared with the electric fatigue obtained from metal/ferroelectric polymer/p-Si capacitors. Our experiments indicate that the existence of SiO2 layer has greatly improved the fatigue endurance in metal/ferroelectric polymer/SiO2/p-Si capacitors. We also discuss the possible mechanism causing this improved fatigue endurance.
Keywords:ferroelectric polymer; capacitor memories; electric fatigue
 
 
 

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