A 3.4dB NF k-band LNA in 65nm CNOS Technology

Xu Jianfei; Yan Na

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A 3.4dB NF k-band LNA in 65nm CNOS Technology

Xu Jianfei 1,Yan Na 2 * #

1.ASIC & System State Key Laboratory, Fudan University, ShangHai 201203

2.ASIC & System State Key Laboratory, Fudan University

*Correspondence author

#Submitted by

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Funding: Doctoral Program of Higher Education of China（No.No.20100071120026）, National Natural Science Foundation of China （No.No.61076028）

Opened online:10 October 2012

Accepted by: none

Citation: Xu Jianfei,Yan Na.A 3.4dB NF k-band LNA in 65nm CNOS Technology[OL]. [10 October 2012] http://en.paper.edu.cn/en_releasepaper/content/4489736

This paper introduces a design method for k-band (18-26.5 GHz) LNA with best noise performance. Then a k-band LNA is designed following the design method in 65-nm CMOS mixed signal process. The LNA has a peak gain of 20.46 dB at 22.45 GHz and a 3 dB bandwidth of 3.8 GHz. The S11 is better than -11 dB and S22 better than -15 dB across the band. The measured smallest noise figure (NF) is 3.4 dB. The whole chip consumes 11mA current under 1.1V supply voltage and occupies an area of 710 μm × 540 μm.

Keywords:IC Design; LNA; k-band; CMOS technology

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