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Temperature Induced Spin Relaxation in Organic Semiconductors
YIN Sun * #
Department of Physics and State Key Laboratory of Crystal Materials, Shandong University, JiNan 250100
*Correspondence author
#Submitted by
Subject:
Funding: National Science Foundation of China (No.Grant Nos. 10904082 ), the ResearchFund for the Doctoral Program of Higher Education(No.No. 20090131120060)
Opened online: 7 December 2012
Accepted by: none
Citation: YIN Sun.Temperature Induced Spin Relaxation in Organic Semiconductors[OL]. [ 7 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4499446
 
 
Spin relaxation due to energy level fluctuation in organic semiconductors is investigated by solving the Liouville equation of a two-level system with diagonal Hamiltonian elements being described by stochastic processes. When the polaron pair situates on one molecule, or an exciton, no spin relaxation is possible. In the opposite case when the coupled polaron pair distributes in two neighboring molecules, the relaxation occurs between spin singlet and one of the spin triplet states but not between spin triplet states.
Keywords:theoretical condensed matter physics; temperature; spin relaxation; organic magnetoresistance
 
 
 

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