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Effect of Co Doping on the Transport Properties of La0.1Bi0.9FeO3 Ceramics
WANG Shouyu 1,LIU Weifang 2 *
1.College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074, China
2.School of Science, Tianjin University, Tianjin 300072, China
*Correspondence author
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Funding: ;Specialized Research Fund for the Doctoral Program of Higher Education(No.20090032120067), Tianjin Natural Science Foundation (No.No.11JCZDJC21800, 11JCYBJC02700), National Natural Science Foundation (No.No. 11004148, 11104202)
Opened online:17 December 2012
Accepted by: none
Citation: WANG Shouyu,LIU Weifang.Effect of Co Doping on the Transport Properties of La0.1Bi0.9FeO3 Ceramics[OL]. [17 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4502500
 
 
The effects of cobalt doping on the electrical conductivity of La0.1Bi0.9Fe1-xCoxO3 (LBFCO, x=0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50 oC and 80 oC). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects.
Keywords:reversible resistive switching; threshold switching effect; oxygen vacancy
 
 
 

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