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Low-roughness and easily-etched transparent conducting oxides with a stack structure of ITO and IZO
Xu Hua,Lan Linfeng * #,Xu Miao,Luo Dongxiang,Li Min,Xiao Peng,Yao Rihui,Peng Junbiao
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640
*Correspondence author
#Submitted by
Subject:
Funding: the National Natural Science Foundation of China (No.Grant Nos. 61204087, 51173049, U0634003, and 60937001), the Specialized Research Fund for the Doctoral Program of Higher Education(No.Grant No. 20120172120008), the Guangdong Natural Science Foundation(No.Grant No. S2012040007003)
Opened online: 3 April 2013
Accepted by: none
Citation: Xu Hua,Lan Linfeng,Xu Miao.Low-roughness and easily-etched transparent conducting oxides with a stack structure of ITO and IZO[OL]. [ 3 April 2013] http://en.paper.edu.cn/en_releasepaper/content/4534443
 
 
Indium tin Oxide (ITO) thin film is hard to be etched in wet etchants because of the crystalline state. To obtain easily-etched transparent conductor oxide (TCO), a layer of ultra-thin indium-zinc oxide (IZO) was inserted between ITO films. It was found that the as-deposition TCO film with IZO insertion layers was amorphous and easily-etched by oxalic. Furthermore, the surface roughness of this multilayer TCO film was only 0.52 nm, much lower than that of the ITO monolayer film with the same thickness. After annealing at 250 degree in air, a low sheet resistance of ~10 Ω/□ and a reasonably transmittance of ~85% in visible range film were obtained.
Keywords:transparent conducting oxide; ITO-IZO multilayer film; easily-etched
 
 
 

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