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| Layered two-dimensional (2D) gallium monochalcogenides emiconductor crystals hold great promises for potential electronics and photonics application. In this paper, we reported the optoelectronic properties of 2D GaSe0.5Te0.5 nanoflakes. The GaSe0.5Te0.5 nanoflakes were synthesized by chemical vapor deposition (CVD) and characterized by SEM, TEM, Raman and PL spectra, which demonstrate the high crystal quality of as-prepared nanoflakes. The photodetector based on GaSe0.5Te0.5 nanoflake shows fast response time, high reversibility and stability both in air and vacuum. The photo-responsivity is up to 22AW-1 under illumination of 532nm light. More interesting, the GaSe0.5Te0.5 photodetector demonstrate extended light response range, as compared with pure GaSe. The photoresponsivity is 13AW-1 for 650nm red light. The present results suggest strongly that the 2D GaSe0.5Te0.5 nanoflakes hold extensive applications in next-generation photodetection and photosensing nanodevices. |
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| Keywords:2D layered semiconductor; GaSe0.5Te0.5 nanoflakes; Photodetector; Raman spectrum |
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