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Effect of Post Thermal Annealing on the Optical Properties of InP/ZnS Quantum Dots Films
Zhang Bowen 1,Wei Zhipeng 2 *,Fan Xuan 2,Wang Dengkui 2,Gao Xian 2,Fang Dan 2,Wang Xinwei 2,Wang Xiaohua 2,Chen Rui 2
1.State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology,130022;State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology,130022;State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology,130022;State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology,130022;State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology,130022;State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology,130022;School of Materials Science and Engineering, Changchun University of Science and Technology,130022;State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology,130022;Department of Electrical and Electronic Engineering, South University of Science and Technology of China,518055
2.
*Correspondence author
#Submitted by
Subject:
Funding: National Natural Science Foundation of China(No.No. 61404009, 61474010, 61574022, 61504012, 61674021, 11404219, 11404161, 11574130, 11674038), Foundation of State Key Laboratory of High Power Semiconductor Lasers, the Developing Project of Science and Technology of Jilin Province(No.No. 20160519007JH, 20160520117JH, 20160101255JC, 20160204074GX, 20170520117JH), the national 1000 plan for young talents and Shenzhen Science and Technology Innovation Committee(No.No. JCYJ20150630162649956, JCYJ20150930160634263, and KQTD2015071710313656)
Opened online:30 January 2018
Accepted by: none
Citation: Zhang Bowen,Wei Zhipeng,Fan Xuan.Effect of Post Thermal Annealing on the Optical Properties of InP/ZnS Quantum Dots Films[OL]. [30 January 2018] http://en.paper.edu.cn/en_releasepaper/content/4743297
 
 
The enhancement of optical properties via thermal annealing on InP/ZnS core/shell quantum dots (QDs) film was investigated in this work. The increase of emission intensities of the QDs films was observed after thermal annealing at 180 ℃ for 5 minutes. Through temperature dependence photoluminescence (TDPL) and power dependence photoluminescence (PL) measurement, the peak located at the low-energy shoulder was confirmed to be localized states emission and the high energy one comes from free-carrier emission. Moreover, from the TDPL spectra of the sample anneal at 180 ℃ for 5 minutes, the full width at half maximum (FWHM) of localization states emission was nearly the same before 250 K, and then decreased with increasing temperature. However, the FWHM was decreased significantly with temperature increased in the untreated sample. We conclude that the escape of localization states with increasing temperature contributes to this anomaly phenomenon. Our studies have significance on the application of QDs in electroluminescence or down-conversion light-emitting applications.
Keywords:InP/ZnS QDs film; Thermal annealing; Optical properties
 
 
 

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