Home > Papers

 
 
Temperature dependence of electron-spin coherence in intrinsic bulk GaAs
Tianshu Lai * #,Xiaodong Liu,Haihong Xu,Zhongxing Jiao,Jinhui Wen ,Weizhu Lin
Zhongshan University
*Correspondence author
#Submitted by
Subject:
Funding: 国家自然科学基金、教育部博士点基金（No.60490295, 20050558030）
Opened online:17 April 2006
Accepted by: none
Citation: Tianshu Lai,Xiaodong Liu,Haihong Xu.Temperature dependence of electron-spin coherence in intrinsic bulk GaAs[OL]. [17 April 2006] http://en.paper.edu.cn/en_releasepaper/content/6276
 
 
Temperature dependence of electron-spin coherence dynamics is investigated for an intrinsic bulk GaAs in the Voigt geometry using the elliptically polarized absorption quantum beat spectroscopy. Temperature dependences of spin coherence and recombination lifetimes as well as g factor of electrons are reported over a temperature range from 8.1 to 260 K. The temperature dependence of spin coherence lifetime ( ) agrees well with a reported theoretical calculation and can be fit well by a relationship , which provides an evidence to support electron-spin decoherence dominated by BAP mechanism. The temperature dependence of g factor also agrees well with results reported.
Keywords:Spin coherence, temperature dependence, elliptically polarized absorption quantum beats, GaAs
 
 
 

For this paper
  • ● PDF (0B)
  • ● Revision 0 　　
  • ● Print this paper
  • ● Recommend this paper to a friend
  • ● Add to my favorite list

    Saved Papers

    Please enter a name for this paper to be shown in your personalized Saved Papers list

Tags
Add yours

Related Papers

Statistics
PDF Downloaded 543
Bookmarked 0
Recommend 5
Comments Array
Submit your papers