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Sponsored by the Center for Science and Technology Development of the Ministry of Education
Supervised by Ministry of Education of the People's Republic of China
Temperature dependent impedance measurement has been conducted to characterizing medium for organic field-effect transistor (OFET), which provides us with information of the energy states of charges that contribute to both dielectricity and conductivity of the capacitors. As the dielectric layers in an OFET, Urathan and Dupont 5018 have been examined. Results show that Urathan should be preferred as its conductivity is enhanced at temperatures above 300 K. Coincidence of critical temperature for conductivity and dielectricity transitions, in the range of 307 – 314 K, manifests the correlation mechanism between hopping and polarizing of electrons in states trapped below the Fermi level and distributed in the interfaces of the multilayer device structures.