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Rapid thermal processing phosphorus gettering of multicrystalline silicon
Li Xiaoqiang,Yang Deren *
State Key Lab of Silicon Materials, Zhejiang University
*Correspondence author
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Funding: 教育部博士点基金（No.20030335073）
Opened online:27 October 2006
Accepted by: none
Citation: Li Xiaoqiang,Yang Deren.Rapid thermal processing phosphorus gettering of multicrystalline silicon[OL]. [27 October 2006] http://en.paper.edu.cn/en_releasepaper/content/9047
 
 
In this paper, the Rapid thermal processing (RTP) phosphorus gettering for multicrystalline silicon was studied by microwave photoconductive decay (microwave-PCD) and optical microscopy. We found that the best gettering temperature was 900℃. This result was in agreement with the gettering result of conventional furnace gettering. In another experiment, the RTP gettering behaviors of the samples from different positions of the silicon ingot were studied. Microstructure analysis after gettering treatment revealed that the dislocation density of the top sample was the highest
Keywords:RTP gettering multicrystalline silicon diffusion lifetime
 
 
 

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