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Characterization of Optical emission spectroscopy of ECR plasma for depositing GaN film
Fu Silie * #,Chen Junfang ,Li Wei ,Zhang Maoping ,Hu Shejun
School of Physics and Communication Engineering
*Correspondence author
#Submitted by
Subject:
Funding: 教育部博士点基金(No.20040574008)
Opened online: 1 December 2006
Accepted by: none
Citation: Fu Silie ,Chen Junfang ,Li Wei .Characterization of Optical emission spectroscopy of ECR plasma for depositing GaN film[OL]. [ 1 December 2006] http://en.paper.edu.cn/en_releasepaper/content/10118
 
 
The optical emission spectroscopes of the hybrid nitrogen and trimethylgallium ECR plasma were investigated in this paper. The results show that TMG is strongly dissociated in ECR plasma at room temperature condition. It is desirable to set a higher N2: TMG ratio (N2: TMG > 10:1) to keep the Ga source and N source in balance to grow high quality GaN film.
Keywords:ECR-MOPECVD; OES; GaN
 
 
 

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