Size- and composition-induced band-gap expansion of nanostructured compound semiconductors

Sun Changqing; Y. Wang; G. Ouyang; L. L. Wang

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Size- and composition-induced band-gap expansion of nanostructured compound semiconductors

Sun Changqing 1 * #,Y. Wang 2,G. Ouyang 1,L. L. Wang 3

1.School of Electrical & Electronic Engineering, Nanyang Technological University

2.College of Physics and Information Science, Hunan Normal University

3.School of Physics and Microelectronics Science, Hunan University

*Correspondence author

#Submitted by

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Funding: none

Opened online:16 December 2008

Accepted by: none

Citation: Sun Changqing,Y. Wang,G. Ouyang.Size- and composition-induced band-gap expansion of nanostructured compound semiconductors[OL]. [16 December 2008] http://en.paper.edu.cn/en_releasepaper/content/26614

We have investigated the joint effect of size and composition-induced band-gap change of semiconductive nanocompounds from the recently-developed bond-order-length-strength (BOLS) correlation mechanism using the approach of local bond average (LBA). An analytical solution has been developed to connect the band-gap energy with the bonding identities of the nanocompounds. Agreement between model predictions with the available experimental measurements of band-gap change of II-VI semiconductor nanocompounds showed that both the particle size and the composition with alloying effect can be used as factors tuning the band-gap energy, suggesting an effective way to realize the desirable properties of semiconductive nanocompounds.

Keywords:Nanostructured semiconductor;size effect;composision effect

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