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| (Bi3.15Nd0.85)(NixTi1-x)3O12 (BNNT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. The effect of Ni-doping amount on the structure and electrical properties of Bi3.15Nd0.85Ti3O12 thin films was investigated. The structure properties of the films were determined by X-ray diffraction, which indicated that the Ni/Nd-cosubstitution did not destroy the bismuth-layered perovskite structure of Bi4Ti3O12. The dielectric behavior was measured under the frequency from 100 Hz to 100 kHz at room temperature, which indicated that Ni-doping can increase the dielectric constant of BNdT films. For x=0.10 the dielectric constants is 297 at the frequency of 1 kHz. Meanwhile, well saturated hysteresis loops were observed in the BNNT thin films. The remanent polarization (2Pr) and coercive field (2Ec) of our BNdT films are 34.8 μC/cm2 and 250 kV/cm, respectively. With x increasing, both 2Pr and 2Ec of BNNT films decreased. For x=0.10, the 2Pr and 2Ec are 17.7 μC/cm2 and 175 kV/cm, respectively. |
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| Keywords:Nd/Ni-codoped (Bi,Nd)4Ti3O12;thin film;ferroelectric;dielectric |
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