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Sponsored by the Center for Science and Technology Development of the Ministry of Education
Supervised by Ministry of Education of the People's Republic of China
A reliable and efficient molecular dynamics program to simulate the low energy ion implantation is developed. The newest physical models are included and some efficient algorithms are used to conduct realistic and accurate simulations. By comparing the simulation results with the SIMS data for B, As and P, the program is verified. An atomistic model for annealing simulation is presented. The simulation is carried out for RTA annealing after B implantation. Agreements between simulation and SIMS data are achieved and both BED and TED phenomena are characterized.