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Atomistic Simulation on Ion Implantation and Annealing
Min Yu * #,Ru Huang,Xing Zhang
Peking University
*Correspondence author
#Submitted by
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Funding: 教育部博士点基金，国家自然科学基金（No.20020001017，90207004）
Opened online:12 December 2005
Accepted by: none
Citation: Min Yu,Ru Huang,Xing Zhang.Atomistic Simulation on Ion Implantation and Annealing[OL]. [12 December 2005] http://en.paper.edu.cn/en_releasepaper/content/4299
 
 
A reliable and efficient molecular dynamics program to simulate the low energy ion implantation is developed. The newest physical models are included and some efficient algorithms are used to conduct realistic and accurate simulations. By comparing the simulation results with the SIMS data for B, As and P, the program is verified. An atomistic model for annealing simulation is presented. The simulation is carried out for RTA annealing after B implantation. Agreements between simulation and SIMS data are achieved and both BED and TED phenomena are characterized.
Keywords:simulation, implantation, annealing
 
 
 

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