Effect of the growth temperature on the surface characterization of β-FeSi2 films prepared by pulsed laser deposition

JIANG Shouzhen; XU Shicai; MAN Baoyuan

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Effect of the growth temperature on the surface characterization of β-FeSi2 films prepared by pulsed laser deposition

JIANG Shouzhen 1 * #,XU Shicai 2,MAN Baoyuan 2

1.College of Physics and Electronics of Shandong Normal University, JiNan 250014

2.College of Physics and Electronics of Shandong Normal University , Jinan, 250014

*Correspondence author

#Submitted by

Subject:

Funding: Postdoctoral Innovation Projects of Shandong （No.200903036）, Science and Technology Planning Project of Higher Education of Shandong Province（No.J11LA14）, Specialized Research Fund for the Doctoral Program of Higher Education（No.20103704120003）

Opened online:26 December 2011

Accepted by: none

Citation: JIANG Shouzhen,XU Shicai,MAN Baoyuan.Effect of the growth temperature on the surface characterization of β-FeSi2 films prepared by pulsed laser deposition[OL]. [26 December 2011] http://en.paper.edu.cn/en_releasepaper/content/4456180

The β-FeSi2 films were successfully fabricated by pulse laser deposition on silicon (100) in a wide range of growth temperature. The crystalline structures of the films were measured by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). It shows that crystalline quality of the films has improved with the increase of the growth temperature and the (331)-orientated monocrystal β-FeSi2 films are obtained at the growth temperature of 800 ℃. The surface properties of the films were characterized with scanning electron microscopy (SEM). The smooth surface of the films was acquired at 750 ℃-800 ℃. It is found that both the crystal orientation and surface morphology of the β-FeSi2 films were associated with growth temperature.

Keywords:Pulse laser deposition; growth temperature; β-FeSi2

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