A method for the solution of the electrostatic properties of metal-(n)AlGaN-GaN two dimensional electron gas

ZHANG Jinfeng; HAO Yue

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A method for the solution of the electrostatic properties of metal-(n)AlGaN-GaN two dimensional electron gas

ZHANG Jinfeng 1 * #,HAO Yue 2

1.School of Microelectronics, Xidian University, Xi\'an 710071

2.School of Microelectronics, Xidian University, Xi'an 710071

*Correspondence author

#Submitted by

Subject:

Funding: New Teacher Foundation for Doctoral Program of Ministry of Education of China （No.Grant No. 200807011012）

Opened online:28 February 2012

Accepted by: none

Citation: ZHANG Jinfeng,HAO Yue.A method for the solution of the electrostatic properties of metal-(n)AlGaN-GaN two dimensional electron gas[OL]. [28 February 2012] http://en.paper.edu.cn/en_releasepaper/content/4466959

To help explore the electrostatic properties of AlGaN-GaN two dimensional electron gas (2DEG), we present a simple and efficient method to determine the fermi level EF and solve 2DEG distribution and conduction band edge simultaneously, whose essence is to fix EF by two 2DEG sheet density vs. EF relations respectively deduced from Schrfdinger and Poisson equations. This method is applicable to the situation that depletion approximation holds and background doping charge can be omitted, and the polarization effects of nitrides can be combined.

Keywords:AlGaN-GaN heterostructures; two dimensional electron gas; fermi level; sheet density

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