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Confirmation for the nonlinear shift of absorption edge in narrow-gap HgCdTe
YUE Fangyu * #
Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241
*Correspondence author
#Submitted by
Subject:
Funding: The Fundamental Research Funds for the Central Universities （No.No. 09ECNU）, Specialized Research Fund for the Doctoral Program of Higher Education （No.No. 20090076120010）, NSFC （No.No. 60906043）
Opened online:27 December 2012
Accepted by: none
Citation: YUE Fangyu.Confirmation for the nonlinear shift of absorption edge in narrow-gap HgCdTe[OL]. [27 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4507327
 
 
Nonlinear shift of the absorption edge in HgCdTe was observed in our previous works, where the reason has been tentatively ascribed to the existence of impurity levels. Here, we represent the calculation results of the temperature dependence of the Fermi level in doped-HgCdTe as a function of compositions ( value), doping levels, and ionization (activation) energies of impurity levels. The special temperature points on the Fermi level have been determined, which confirms the experimental observation. This result can also be used to interpret the difference between the absorption and photoluminescence spectra in narrow-gap semiconductors like HgCdTe.
Keywords:Narrow-gap HgCdTe; Fermi level; Bandgap; Impurity level
 
 
 

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