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Low-temperature growth of highly c-oriented GaN films on Ag substrates with ECR-PEMOCVD
WANG Shuai 1 #,QIN Fuwen 2 *
1.School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024
2.School of Physics and Optoelectronic Technology, Dalian University of Technology Dalian 116024, China
*Correspondence author
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Funding: none
Opened online: 8 April 2013
Accepted by: none
Citation: WANG Shuai,QIN Fuwen.Low-temperature growth of highly c-oriented GaN films on Ag substrates with ECR-PEMOCVD[OL]. [ 8 April 2013] http://en.paper.edu.cn/en_releasepaper/content/4531543
 
 
Highly-preferred GaN films are deposited on Ag prepared on siliconchip substrates using the electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethylgallium (TMGa) and N2 are employed as the source of Ga and N, respectively, and high purity H2 is used as carrier gas. The effect of deposition temperature on the as-grown GaN films is systematically investigated by in-situ reflection high energy electron diffraction(RHEED), x-ray diffraction(XRD) and scanning electron microscope(SEM). The results show that high-quality GaN films with high preferred orientation and smooth surface were successfully achieved on Ag at the proper deposition temperature of 485℃.
Keywords:GaN films; Ag Substrates; ECR-PEMOCVD; Low-temperature Synthesis
 
 
 

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