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Hexagonal gallium nitride film with micron thickness fabricated by nitridation of Mg doped beta-type gallium oxide crystal
WANG Liangling #,HAO Liangzhen,ZHANG Huaijin *
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100
*Correspondence author
#Submitted by
Subject:
Funding: China Postdoctoral Science Foundation funded project(No.2011M500731), the Innovation Fund for the Post-Doctoral Program of Shandong Province(No.201103038), the National Natural Science Foundation of China(No.No. 51025210)
Opened online:11 November 2013
Accepted by: none
Citation: WANG Liangling,HAO Liangzhen,ZHANG Huaijin.Hexagonal gallium nitride film with micron thickness fabricated by nitridation of Mg doped beta-type gallium oxide crystal[OL]. [11 November 2013] http://en.paper.edu.cn/en_releasepaper/content/4567233
 
 
The GaN film with micron thickness was fabricated on the (100) cleavage plane of beta-type gallium oxide single crystal by nitridation with ammonia. The GaN film has small cavities, suggesting that the growth mechanism is three dimensional growth mode like Volmer-Weber model. The thickness of GaN film formed by nitridation is about 1.18 micron. There are GaN (002) and (004) diffraction peaks in the XRD spectra, indicating that the epilayer has a strong c-axis preferred orientation. The photoluminescence spectra, transmittance spectra and Raman spectra of the GaN film were investigated.
Keywords:GaN film; nitridation; beta-type gallium oxide crystal; floating zone method
 
 
 

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