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Sponsored by the Center for Science and Technology Development of the Ministry of Education
Supervised by Ministry of Education of the People's Republic of China
We report the large-size synthesis of atomic monolayer hexagonal boron nitride (h-BN) film on flexible Cu foil by low pressure chemical vapor deposition (CVD) method. The borazane powder was used as the precursor carried by mixed hydrogen/argon gases. By rolling the Cu foil substrate into cylindrical shape, wafer-scale monolayer h-BN film has been achieved in a size over 7 inch. With the aid of PMMA, the h-BN monolayer was perfectly transferred onto 4" Si wafer for characterization and further electrical applications. This technique could be transferred to thin film growth on any flexible substrates.