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Influence of ion- implantation on the effective Schottky barrier height of NiGe/n-Ge contacts
Li Cheng * #,Tang Mengrao,Lin Guangyang,Huang Wei,Wang Chen
Department of Physics, Xiamen University, Xiamen, Fujian 361005
*Correspondence author
#Submitted by
Subject:
Funding: Ph.D. Programs Foundation of Ministry of Education of China under Grant （No.20110121110025）
Opened online:19 November 2015
Accepted by: none
Citation: Li Cheng,Tang Mengrao,Lin Guangyang.Influence of ion- implantation on the effective Schottky barrier height of NiGe/n-Ge contacts[OL]. [19 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661258
 
 
The mechanism to modulate the effective Schottky barrier height of NiGe/Ge contacts with impurity incorporation is still under debate. We experimentally demonstrate that ion implant damages, rather than interface passivation, play a dominant role in lowering the effective Schottky barrier height of NiGe/n-Ge contacts in the case of selenium and silicon implantation. Selenium segregated at the interface between NiGe and Ge acts as neither donor nor passivator for alleviation of Fermi- level pinning effect to greatly influence on the electrical characteristics. It is rather different from the role of phosphorus, which segregates at the interface leading to good ohmic behavior for the NiGe/n-Ge contacts by narrowing Schottky barrier. Si doping in Ge slightly increases the effective barrier height of the NiGe/n-Ge contacts.
Keywords:Schottky barrier height; germanium; nickel germanide; doping
 
 
 

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