Home > Papers

 
 
Enhanced photoluminescence from porous silicon by rare earth doping and DBR structures
Sun Difei 1 #,Jia Zhenhong 2 *,Lv Xiaoyi 2
1.School of Physical Science and Technology, Xinjiang University, Urumqi 830046
2.School of Information Science and Engineering, Xinjiang University, Urumqi 830046
*Correspondence author
#Submitted by
Subject:
Funding: Xinjiang Science and Technology Project (No.201412112), National Science Foundation of China (No.61265009, 11264038)
Opened online: 3 December 2015
Accepted by: none
Citation: Sun Difei,Jia Zhenhong,Lv Xiaoyi.Enhanced photoluminescence from porous silicon by rare earth doping and DBR structures[OL]. [ 3 December 2015] http://en.paper.edu.cn/en_releasepaper/content/4666939
 
 
We report a new way to enhance the photoluminescence of porous silicon(PS) in red light(625 nm) under room temperature by doping the rare earth(Yb) in porous silicon with distributed Bragg reflection (DBR) structures. It is observed that a suitable concentration of Yb3+ ions could enhance the photoluminescence of porous silicon effectively. Compared with the single-layer porous silicon film, the enhancement of Yb-doped PS photoluminescence from porous silicon DBR structures is higher. RE doping and DBR structures could double strengthen PS photoluminescence.
Keywords:DBR structures; photoluminescence; porous silicon; rare earth
 
 
 

For this paper

  • PDF (0B)
  • ● Revision 0   
  • ● Print this paper
  • ● Recommend this paper to a friend
  • ● Add to my favorite list

    Saved Papers

    Please enter a name for this paper to be shown in your personalized Saved Papers list

Tags

Add yours

Related Papers

Statistics

PDF Downloaded 71
Bookmarked 0
Recommend 0
Comments Array
Submit your papers