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| Novel UV photodetector based on in-situ grown n-GaN nanowires array/p-GaNhomojunction |
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Zhicheng Wang 1,Shaoteng Wu 2,Liancheng wang 2,Chengmin Wang 3,Hui Zhang 3,Deping Xiong 3,Ning Zhu 1,Zhiqiang Liu 2,Xiaoyan Yi 2,Junxi Wang 2,Jinmin Li 2,Miao He 3 *
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1.Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, P. R. China
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2.Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. China
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3.School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
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| *Correspondence author |
| #Submitted by |
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| Funding:
none
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| Opened online:17 May 2017 |
| Accepted by:
none |
| Citation: Zhicheng Wang,Shaoteng Wu,Liancheng wang.Novel UV photodetector based on in-situ grown n-GaN nanowires array/p-GaNhomojunction[OL]. [17 May 2017] http://en.paper.edu.cn/en_releasepaper/content/4732637 |
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