Resistance switching characteristic of Ag/Fe2O3/MoS2/Ag with very low switching voltage

SHU Haiyan; HE Chaotao; ZHANG Xingwen; LI Shichang; CHEN Peng

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Resistance switching characteristic of Ag/Fe2O3/MoS2/Ag with very low switching voltage

SHU Haiyan,HE Chaotao,ZHANG Xingwen,LI Shichang,CHEN Peng *

Physical Science and Technology, Southwest University, 400715;Physical Science and Technology, Southwest University, 400715;Physical Science and Technology, Southwest University, 400715;Physical Science and Technology, Southwest University, 400715;Physical Science and Technology, Southwest University, 400715

*Correspondence author

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Funding: none

Opened online: 4 December 2023

Accepted by: none

Citation: SHU Haiyan,HE Chaotao,ZHANG Xingwen.Resistance switching characteristic of Ag/Fe2O3/MoS2/Ag with very low switching voltage[OL]. [ 4 December 2023] http://en.paper.edu.cn/en_releasepaper/content/4761573

In this paper,the resistive switching characteristics of Ag/Fe2O3/MoS2/Ag multilayer film deposited on ITO by magnetron sputtering are investigated.The Ag/Fe2O3/MoS2/Ag device exhibits superior resistive switching behavior compared to the device without Fe2O3 layer due to the positive effect of oxygen vacancies in Fe2O3 on the formation of conducting filaments. The resistive switching ratio of the device is close to 7.0 × 105. The current value of the device drops sharply at 0.12 V when the voltage is swept forward, and the device switches from HRS back to LRS at -0.28 V when a voltage of opposite polarity is applied.The I-V curves of the device are fitted in double logarithmic coordinates, and it is found that the device is controlled by an ohmic conduction model in the low resistance state and two conduction models in the high resistance state: in the low bias region, which exhibits ohmic conduction, and at higher voltages, which is controlled by the SCLC conduction model. Such a resistive switching characteristic with very low switching voltage and high resistance ratio is of particular importance in the application of resistive stochastic storage.

Keywords:resistance switch; conductive thin wire;oxygen vacancylow switching voltage

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