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| The effect of RTP pre-annealing with different atmospheres and temperatures on the precipitation behavior and electrical property of copper, was investigated by Scanning Infrared Microscopy (SIRM), Electrical beam induced current (EBIC) and Microwave photo conductance decay (m-PCD). Compared to the situation without RTP pre-annealing, RTP pre-annealing in Ar atmosphere at 1200℃ or 1100℃ would seldom influence copper precipitates’ size or density, however the recombination intensity increased and the effective lifetime decreased. Whereas RTP pre-annealing in O2 atmosphere at 1200℃ or 1100℃ would prevent the copper precipitation, copper tended to form large copper precipitate colonies, however the effective lifetime decreased also. It means vacancies or interstitial silicon atoms produced during RTP pre-annealing have effect on the precipitation behavior or electrical property of copper. Moreover, the samples pre-annealing at 1200℃ had lower lifetime than that at 1100℃, and pre-annealing in Ar atmosphere had lower lifetime than that in O2 atmosphere. |
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| Keywords:Silicon, RTP, Lifetime |
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