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| Surface oxidation and porosity variation play significant roles in the dielectric performance of porous silicon (PS) yet discriminating the contribution of these events is a challenge. Here we present an analytical solution that covers contributions from the components of silicon oxide surface, silicon backbone and voids using a serial-parallel capacitance structure. Agreement between modeling predictions and measurement has been realized, which turns out an effective method that enables us to estimate the extent of surface oxidation of a specimen by measuring the porosity dependent dielectric response of the chemically passivated PS, and provides guidelines that could be useful for designing dielectric porous structures with surface oxidation. |
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| Keywords:dielectric constant, oxidation degree, porosity, porous silicon |
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