Cu2ZnSnSe4 Thin Films Prepared by Selenization of One-step Electrochemically Deposited Cu-Zn-Sn-Se Precursors |
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Meng Mingming 1 #,Wan Lei 2,Zou Peng 3,Miao Shiding 4,Xu Jinzhang 2 *
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1.School of Electrical Engineering and Automation, Hefei University of Technology (HFUT), HeFei 230009
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2.School of Electrical Engineering and Automation, Hefei University of Technology (HFUT), Hefei 230009
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3.School of Materials Science and Engineering, Hefei University of Technology (HFUT), Hefei 230009
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4.School of Chemical Engineering, HFUT, Hefei 230009
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*Correspondence author |
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Subject: |
Funding:
Natural Science Foundation of Anhui Province (No.No. 11040606Q45), Research Fund for the Doctoral Program of Higher Education of China (No.No. 20110111120002 and No. 20110111110002) |
Opened online:16 October 2012 |
Accepted by:
none |
Citation: Meng Mingming,Wan Lei,Zou Peng.Cu2ZnSnSe4 Thin Films Prepared by Selenization of One-step Electrochemically Deposited Cu-Zn-Sn-Se Precursors[OL]. [16 October 2012] http://en.paper.edu.cn/en_releasepaper/content/4491026 |