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1. Evaluation on Temperature-Dependence Properties of Low-Concentrating Photovoltaic module | |||
LIU Jingjing,ZHANG Yun Hui,YANG Fan | |||
Energy Science and Technology 25 December 2012 | |||
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Abstract:A special monocrystalline silicon solar cell provided by CSUN was studied through an indoor experimental platform based on a DLSK-SOL3 solar-simulator and module measurement system. The illumination density of light was modulated to simulate a low concentration condition (0.2sun?10sun) by varying the working voltage of the Xenon lamp and the distance between the test module and the Xenon lamp. The temperature of solar module is at the range of RT to 50℃。The temperature-dependence properties were obtained. | |||
TO cite this article:LIU Jingjing,ZHANG Yun Hui,YANG Fan. Evaluation on Temperature-Dependence Properties of Low-Concentrating Photovoltaic module[OL].[25 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4509004 |
2. Gallium doped Czochralski silicon with phosphorus compensation for photovoltaic application | |||
CHEN Peng,YU Xuegong,Yang Deren | |||
Energy Science and Technology 13 December 2012 | |||
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Abstract:In this paper, we compare the properties of the gallium-doped Czochralski (Ga-Cz) silicon and the gallium-phosphorus co-doped Czochralski (GP-Cz) silicon. It shows that both majority and minority carrier mobility in Cz silicon are reduced due to the Ga and P compensation. However, the reduction of carrier mobility is not as severe as expected by Klaassen's model. The infrared absorption spectra for GP-Cz samples show that the Ga- and P-related bands significantly get broadened. It is suggested that a portion of P atoms are trapped by Ga atoms to form the Ga-P pairs, resulting in the reduction of carrier scattering centers. The solar cells based on GP-Cz silicon have comparable efficiencies with the Ga-Cz silicon solar cells, implying that the Ga and P compensation is not critical for its photovoltaic application. | |||
TO cite this article:CHEN Peng,YU Xuegong,Yang Deren. Gallium doped Czochralski silicon with phosphorus compensation for photovoltaic application[OL].[13 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4501417 |
3. Cu2ZnSnSe4 Thin Films Prepared by Selenization of One-step Electrochemically Deposited Cu-Zn-Sn-Se Precursors | |||
Meng Mingming,Wan Lei,Zou Peng,Miao Shiding,Xu Jinzhang | |||
Energy Science and Technology 09 October 2012 | |||
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Abstract:A non-vacuum strategy was reported in facile preparation of kesterite-type Cu2ZnSnSe4 (CZTSe) thin films via selenization of one-step electrochemically prepared Cu-Zn-Sn-Se precursors. The Cu-Zn-Sn-Se precursor films were prepared by electrochemical deposition from electrolytes containing CuSO4, ZnSO4, SnCl4 and H2SeO3, and the substrate is a Mo coated soda-lime glass. The CZTSe thin films were obtained by annealing the electrochemically deposited films in the selenium vapors at the temperature of 550 C. The crystal phases, micro-structures, chemical compositions and optical properties of CZTSe films have been studied by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), inductively coupled plasma optical emission spectrometer (ICP-OES), Raman scattering spectrum, and UV-Vis absorption spectroscopic means. The results revealed that the electrolytes with Cu:Zn:Sn:Se molar ratio of 3:70:20:3 yields nearly pure phase of kesterite, and a band gap of 0.94eV was determined by spectroscopic measurements. | |||
TO cite this article:Meng Mingming,Wan Lei,Zou Peng, et al. Cu2ZnSnSe4 Thin Films Prepared by Selenization of One-step Electrochemically Deposited Cu-Zn-Sn-Se Precursors[OL].[ 9 October 2012] http://en.paper.edu.cn/en_releasepaper/content/4491026 |
4. Preparation and Performance of ZnO Array Photoelectrodes Under Different Hydrothermal Reactions | |||
ZHUANG Jia,LI Linfeng | |||
Energy Science and Technology 10 April 2012 | |||
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Abstract:In this paper, ZnO array photoelectrodes with different morphologies were prepared by different hydrothermal reactions, the relationship between morphology of ZnO arrays and performance of dye-sensitized solar cells (DSSCs) was also reported. The morphologies of the prepared products were measured using scanning electron microscopy (SEM), and the results demonstrated that the obtained ZnO arrays were much different in length, aspect ratio and surface topography. The effects of morphology of ZnO arrays on the DSSC performance were investigated by current-voltage (J-V) characteristic test, and the parameters indicated that longer length, higher aspect ratio and hollow shape on the surface of ZnO arrays leaded to the short circuit current density (Jsc) increase, buffer layers provided by ZnO seed film and thick ZnO arrays resulted in the increase of open circuit voltage (Voc). The present research may be helpful to improve the conversion efficiency of ZnO array-based DSSCs. | |||
TO cite this article:ZHUANG Jia,LI Linfeng. Preparation and Performance of ZnO Array Photoelectrodes Under Different Hydrothermal Reactions[OL].[10 April 2012] http://en.paper.edu.cn/en_releasepaper/content/4474579 |
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