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	1. Numerical Investigation on the Relationship between the Atomic Weigh and the Interface Thermal Conductivity of Aluminum/Cooper Composite Interface in Nanoscale Situation
	GE Daohan
	Electrics, Communication and Autocontrol Technology 25 April 2017
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	Abstract:The interfacial thermal conductivity of Aluminum/Copper interface is systematic studied based on non-equilibrium molecular dynamics (NEMD) method by considering the atomic migration and atomic weight under different temperatures. An interesting phenomenon is discovered that the interfacial thermal conductivity is effect by the atomic weight of each materials. The thermal conductivity of the materials with small atomic weight is larger than that of the materials with large atomic weight in the interface heat transfer. The contribution of aluminum and copper to the interface thermal conductivity is inversely proportional. This investigation is helpful for understanding the interface heat transfer mechanism of the interface structures, which also implies a potential method for the analysis of the interface thermal performance and design of the interface structures.
	TO cite this article:GE Daohan. Numerical Investigation on the Relationship between the Atomic Weigh and the Interface Thermal Conductivity of Aluminum/Cooper Composite Interface in Nanoscale Situation[OL].[25 April 2017] http://en.paper.edu.cn/en_releasepaper/content/4729420


	2. Bipolar and unipolar resistive switching mode in Zr-doped ZnO thin film for multi-bit resistance random access memory
	XU Dinglin,TANG Minghua,ZENG Baiwen,XIAO Yongguang
	Electrics, Communication and Autocontrol Technology 18 November 2013
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	Abstract:In this work, we report the coexistence of the bipolar and unipolar resistive switching mode in Pt/Zn0.99Zr0.01O/Pt structure device. After the forming process, this device with URS behavior shows either URS mode in the same direction or BRS mode in the opposite directions during the reset process. By controlling different compliance currents (Icc) and the span of voltage sweeping in the reset process (Vstop), controllable multi-state resistances in low resistance states and high resistance states for the BRS mode were demonstrated. The reliability results indicate that our devices have high potential for the next generation nonvolatile memories application.
	TO cite this article:XU Dinglin,TANG Minghua,ZENG Baiwen, et al. Bipolar and unipolar resistive switching mode in Zr-doped ZnO thin film for multi-bit resistance random access memory[OL].[18 November 2013] http://en.paper.edu.cn/en_releasepaper/content/4570062

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	3. A Simulation and Experimental Study for improving thermal reliability of P-i-N power diodes
	Jia Yunpeng,Wu Yu,Hu Dongqing
	Electrics, Communication and Autocontrol Technology 25 February 2013
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	Abstract:In this paper, the temperature dependence modes in modern p-i-n power diodes is investigated. Resorting to therotical derivation, an inversion point of temperature coefficiency TK in current-voltage characteristics of p-i-n power diodes is proved to exist. Semiconductor device simulations are used in order to determine the parameters which influence temperature coefficiency TK. Both simulation and experimental results show that a positive temperature coefficiency TK for forward voltage drop VF in interesting current region is possible, if the relating parameters is moderately adjusted. With a SEM microgragh technique, the structure of the experimental samples were measured.
	TO cite this article:Jia Yunpeng,Wu Yu,Hu Dongqing. A Simulation and Experimental Study for improving thermal reliability of P-i-N power diodes[OL].[25 February 2013] http://en.paper.edu.cn/en_releasepaper/content/4523193


	4. Performance Improvement of Oxide Thin-Film Transistors by a Two-Step-Annealing Method
	Li Min,Lan Linfeng,Xu Miao,Xu hua,Luo Dongxiang,Xiao Peng,Yao Rihui,Peng Junbiao
	Electrics, Communication and Autocontrol Technology 04 February 2013
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	Abstract:In this paper, thin-film transistor (TFT) with indium zinc oxide (IZO) channel layer was fabricated using a two-step-annealing method. The device showed better uniformity and better stability under positive bias stress, negative bias illumination stress, and temperature stress, compared to those with only one annealing step. The falling rate of this device was as high as 0.593 eV/V, showing that trap states in the channel were greatly reduced by the two-step-annealing process.
	TO cite this article:Li Min,Lan Linfeng,Xu Miao, et al. Performance Improvement of Oxide Thin-Film Transistors by a Two-Step-Annealing Method[OL].[ 4 February 2013] http://en.paper.edu.cn/en_releasepaper/content/4519284


	5. Gas sensitive properties of polysiloxane material to organophosphate vapor
	Hu Jia ,Du Xiaosong,Wang Zhidong,Jiang Yadong
	Electrics, Communication and Autocontrol Technology 26 January 2011
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	Abstract:Five functionalized polysiloxane polymers containing phenol, 2-fluorided phenol, 3-fluoro phenol, 2,3-difluoro phenol , 3-methyl fluoro phenol, respectively, have been synthesized and estimated for analysis of the influences of those functional groups on the polymers' sensitivity to dimethyl methyl phosphonate(DMMP). The experimental results shows that those fluoro phenols with stronger hydrogen bond acidity, however, provide smaller sensitivity, compared to phenol. Infrared spectroscopic analysis indicates that forming hydrogen bond of fluorine atom and hydroxy is the reason of increasing the sensitivity and that intermolecular hydrogen bond can make a larger decrease of sensitivity than intramolecular one.
	TO cite this article:Hu Jia ,Du Xiaosong,Wang Zhidong, et al. Gas sensitive properties of polysiloxane material to organophosphate vapor[OL].[26 January 2011] http://en.paper.edu.cn/en_releasepaper/content/4408115


	6. Growth and characterization of InN nanocolumns on InGaN buffer layers
	Yang Pan,Ti Wang,Chang Liu
	Electrics, Communication and Autocontrol Technology 19 March 2010
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	Abstract:C-axis-aligned InN nanocolumns arrays were vertically grown, on 3μm GaN substrates with InGaN buffer layers by radio-frequency molecular beam epitaxy. The density of the nanocolumns could be controlled by adjusting the ratio of In and N. X-ray diffraction, transmission electron microscopy, and field-emission scanning electron microscope were used to study the structural properties of the nanocolumns. And the growth mechanism was studied.
	TO cite this article:Yang Pan,Ti Wang,Chang Liu. Growth and characterization of InN nanocolumns on InGaN buffer layers[OL].[19 March 2010] http://en.paper.edu.cn/en_releasepaper/content/40885


	7. Optical Waveguide Characterization of MgZnO/ZnO Single Quantum Well
	Bian Xuming ,Zhang Jingwen
	Electrics, Communication and Autocontrol Technology 27 November 2006
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	Abstract:In order to accurately model and design MgZnO/ZnO heterostructure optoelectronic devices, a precise knowledge of the fundamental optical properties for ZnO and its alloys is important. However, few studies have reported on the optical waveguide characterization. In this letter, optical waveguide characterization of MgZnO/ZnO quantum well was preliminary studied, and optical confinement factor Г of the strained active region as well as the intensity distribution of the quantum well were figured out. From the results obtained above, this paper describes an optimal design for the molar concentration of Mg in the waveguide region and restrict region as well as thickness of the strained active region, waveguide layer, confined layer.
	TO cite this article:Bian Xuming ,Zhang Jingwen . Optical Waveguide Characterization of MgZnO/ZnO Single Quantum Well[OL].[27 November 2006] http://en.paper.edu.cn/en_releasepaper/content/9909


	8. Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs
	Wang Wei,Sun Jianping,Gu Ning
	Electrics, Communication and Autocontrol Technology 06 June 2006
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	Abstract:We use a quantum-mechanical model to study the gate tunneling current of Hf-based high-k dielectric films for nanoscale MOSFETs. The three-dimensional gate current component evaluation is performed by the traveling wave calculations for the thermionic emission, Fowler-Nordheim (FN) tunneling, and direct tunneling through the oxide barrier. For the two-dimensional gate current component originated from the subbands in the inversion layers, a transmission calculation is performed. Various Hf-based high-k structures and materials of interest have been examined and compared to access the reduction of gate current in these structures. Effects of nitrogen content, hafnium content, aluminum content, and interfacial layer (IL) on the gate tunneling current have been studied theoretically. Our results show that the reduction of the gate tunneling current can be optimized in terms of the nitrogen content, aluminum content, and the composition of the IL. Our computational results are in very good agreement with experimental data.
	TO cite this article:Wang Wei,Sun Jianping,Gu Ning. Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs[OL].[ 6 June 2006] http://en.paper.edu.cn/en_releasepaper/content/6965

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