Abstract:The vanadyl phthalocyanine thin film transistors were fabricated on the various organosilane self-assembled monolayer (SAM) modified substrates, and how the performance of these transistors affected by the surface properties was studied. The morphologies and X-ray diffraction (XRD) spectrums of vanadyl phthalocyanine films on different SAM-modified surfaces were studied. The study of atomic force microscopy (AFM) and XRD reveals that the vanadyl phthalocyanine film on octadecyltrichlorosilane (OTS) modified substrate has much larger crystal size and better crystalline than those on phenyltrichlorosilane (PTS), 1H,1H,2H,2H-Perfluorodecyltrichlorosilane (FDTS) as well as non-modified substrates, and which contributes that the mobility of corresponding device is several and several dozen times relative to other ones. In addition, by means of static contact angle measurements, the wettabilities of water on silicon dioxide substrates modified with various organosilane SAMs were studied. The results of static contact angle measurements, XRD and AFM reveal that not only the surface hydrophobicity but also the length and type of organic capping group in organosilane SAMs affect the growth of VOPc films and device performance. The highest mobility for the transistor on OTS treated substrates may be due to that the attractive force between VOPc and OTS modified surface is smallest. The crystalline and crystal grain size of VOPc film on PTS is somewhere in between that on OTS treated and non-modified substrate may be the existence of attractive force between VOPc and SiO2 for the length of phenyl group in PTS is much shorter than alkyl chain group in OTS. The VOPc films' performance and crystalline on FDTS treated are worse than that on PTS, which may be the existents of attractive force between -CF3 and VOPc.

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	1. The Study of VOPc OTFTs on Various Organosilane Self-assembled Monolayer Modified Substrates
	Song De,Cui Ning
	Physics 18 November 2015
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	Abstract:The vanadyl phthalocyanine thin film transistors were fabricated on the various organosilane self-assembled monolayer (SAM) modified substrates, and how the performance of these transistors affected by the surface properties was studied. The morphologies and X-ray diffraction (XRD) spectrums of vanadyl phthalocyanine films on different SAM-modified surfaces were studied. The study of atomic force microscopy (AFM) and XRD reveals that the vanadyl phthalocyanine film on octadecyltrichlorosilane (OTS) modified substrate has much larger crystal size and better crystalline than those on phenyltrichlorosilane (PTS), 1H,1H,2H,2H-Perfluorodecyltrichlorosilane (FDTS) as well as non-modified substrates, and which contributes that the mobility of corresponding device is several and several dozen times relative to other ones. In addition, by means of static contact angle measurements, the wettabilities of water on silicon dioxide substrates modified with various organosilane SAMs were studied. The results of static contact angle measurements, XRD and AFM reveal that not only the surface hydrophobicity but also the length and type of organic capping group in organosilane SAMs affect the growth of VOPc films and device performance. The highest mobility for the transistor on OTS treated substrates may be due to that the attractive force between VOPc and OTS modified surface is smallest. The crystalline and crystal grain size of VOPc film on PTS is somewhere in between that on OTS treated and non-modified substrate may be the existence of attractive force between VOPc and SiO2 for the length of phenyl group in PTS is much shorter than alkyl chain group in OTS. The VOPc films' performance and crystalline on FDTS treated are worse than that on PTS, which may be the existents of attractive force between -CF3 and VOPc.
	TO cite this article:Song De,Cui Ning. The Study of VOPc OTFTs on Various Organosilane Self-assembled Monolayer Modified Substrates[OL].[18 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4662908


	2. Preparation and properties of Sb-doped Tin Dioxide films deposited by DC magnetron sputtering at room temperature
	WAN Lei,HU Ke,MA Cheng,ZOU Peng,XU Jinzhang
	Physics 16 November 2015
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	Abstract:In this study, antimony doped tin oxide (SnO2:Sb, ATO) films have been prepared by DC magnetron sputtering at room temperature. X-ray diffraction revealed that the films are composed of nano-crystals with an average grain size of less than 10 nm. The effect of deposition parameters on the structural, electrical and optical properties of ATO films was investigated. The O2 flow rate and DC power were found to affect the properties of the ATO films. With an O2 flow rate of 0.2 sccm and a DC power of 60W, the electrical properties of the ATO films were significantly improved. In the wavelength range from 550 to 900 nm, the average optical transmittance of the ATO films is over 80%.
	TO cite this article:WAN Lei,HU Ke,MA Cheng, et al. Preparation and properties of Sb-doped Tin Dioxide films deposited by DC magnetron sputtering at room temperature[OL].[16 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4662232

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	3. A low-stress, elastic and improved hardness hydrogenated amorphous carbon film
	Wang Qi,He Deyan,Zhang Junyan
	Physics 27 July 2013
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	Abstract:The evolution of hydrogenated amorphous carbon films with fullerene-like microstructure was investigated with the proportion of hydrogen in introduction. The results showed that the films deposited at hydrogen flow rate 50sccm exhibited lower compressive stress (lower 48.6%), higher elastic recovery (higher 19.6%, near elastic recovery rate 90%) and higher hardness (higher 7.4%) than the films deposited without hydrogen introduction. Structural analysis showed the film had relatively high sp2 content and low bonded hydrogen content possessed high hardness, elastic recovery rate and low compressive stress. It was attributed to the curved graphite microstructure, which can form three-dimensional covalently bonded network.
	TO cite this article:Wang Qi,He Deyan,Zhang Junyan. A low-stress, elastic and improved hardness hydrogenated amorphous carbon film[J].


	4. Low-roughness and easily-etched transparent conducting oxides with a stack structure of ITO and IZO
	Xu Hua,Lan Linfeng,Xu Miao,Luo Dongxiang,Li Min,Xiao Peng,Yao Rihui,Peng Junbiao
	Physics 29 March 2013
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	Abstract:Indium tin Oxide (ITO) thin film is hard to be etched in wet etchants because of the crystalline state. To obtain easily-etched transparent conductor oxide (TCO), a layer of ultra-thin indium-zinc oxide (IZO) was inserted between ITO films. It was found that the as-deposition TCO film with IZO insertion layers was amorphous and easily-etched by oxalic. Furthermore, the surface roughness of this multilayer TCO film was only 0.52 nm, much lower than that of the ITO monolayer film with the same thickness. After annealing at 250 degree in air, a low sheet resistance of ~10 Ω/□ and a reasonably transmittance of ~85% in visible range film were obtained.
	TO cite this article:Xu Hua,Lan Linfeng,Xu Miao, et al. Low-roughness and easily-etched transparent conducting oxides with a stack structure of ITO and IZO[OL].[29 March 2013] http://en.paper.edu.cn/en_releasepaper/content/4534443


	5. Plasmonic effect enhanced light capturing in TiO2-SiO2- Ag nanocomposites through Ag nanoparticles embedded in SiO2
	Xu JinXia,Xiao Xiangheng
	Physics 22 January 2013
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	Abstract:TiO2-SiO2-Ag composites are fabricated by depositing TiO2 films on silica substrates embedded with Ag nanoparticles. Enhancement of light absorption of the nanostructural composites is observed. The light absorption enhancement of synthesized structure in comparison to TiO2 is originated from near field enhancement caused by the plasmonic effect of Ag NPs, which can be demonstrated by the optical absorption spectra, Raman scattering investigation and the increase of the photocatalytic activity. The embedded Ag nanoparticles are formed by ion implantation, which effectively prevents Ag to be oxidized through direct contact with TiO2. The suggested incorporation of plasmonic nanostructures shows a great potential application in highly efficient photocatalyst and ultra-thin solar cell.
	TO cite this article:Xu JinXia,Xiao Xiangheng. Plasmonic effect enhanced light capturing in TiO2-SiO2- Ag nanocomposites through Ag nanoparticles embedded in SiO2[OL].[22 January 2013] http://en.paper.edu.cn/en_releasepaper/content/4517397


	6. Effect of total pressure on crystallinity of boron carbon nitride thin films deposited by RF magnetron sputtering
	Gong Enle,Yu Jie,Liu Yi
	Physics 08 October 2008
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	Abstract:Boron carbon nitride (BCN) thin films were deposited on silicon substrates by radio frequency(13.56MHz)magnetron sputtering from hexagonal boron nitride (h-BN) and graphite targets. Deposited BCN thin films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy (RS) and X-ray photoelectron spectroscopy (XPS). The growth total pressure ranged from 0.2 to 6.0Pa. The deposition total pressure was observed to have significant effect on the composition and crystallinity of BCN films. Full width at half maximum (FWHM) of BCN thin films changed with the total pressure increase and better crystallinity was observed for thin films prepared at 1.0Pa.
	TO cite this article:Gong Enle,Yu Jie,Liu Yi. Effect of total pressure on crystallinity of boron carbon nitride thin films deposited by RF magnetron sputtering[OL].[ 8 October 2008] http://en.paper.edu.cn/en_releasepaper/content/24603


	7. Low temperature deposition of p-type nc-Si:H thin films for superstrate a-Si:H based p-i-n solar cells
	Hu Zhihua,Shi Qingnan,Cai Yi,Elvira Fortunato,Rodrigo Martins,Diao Hongwei,Xu Ying,Liao Xianbo
	Physics 08 May 2007
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	Abstract:Boron doped nc-Si:H p-layers were deposited by PECVD technique at a low substrate temperature (~60 0C) with various hydrogen dilution ratio of 150, 100 and 50 respectively. Transmission studies were carried out on these nc-Si:H films to understand the systematic variation of the optical band gap. A detailed and well organized investigation was employed on nc-Si:H films using Raman scattering measurements to identify the exact origin of optical and acoustic vibration modes from Si nanocrystallites as well as from a-Si. Using peak fit software analysis the crystalline volume fraction of nc-Si:H p-layers was estimated as ~73%, 52% and ~16% respectively for 150, 100 and 50 hydrogen dilution. The presently developed nc-Si:H p-layers with different crystalline fraction have been incorporated in single junction a-Si:H solar cells with a superstrate configuration of TCO/p-nc-Si:H (20nm) /i-a-Si:H (350nm) /n-nc-Si:H (30nm) /Al (200nm). It was found that nc-Si:H p-layer with a slightly crystalline fraction is more beneficial for solar cell performances. Applying this slightly crystallized p-layer, together with a H2-plasma treatment of the p-layer prior to deposition of i-layer, an efficiency of 9.0 % with an open circuit voltage of 0.90 V, a fill factor of 0.65 and a short circuit current density of 15.2 mA/cm2 has been achieved.
	TO cite this article:Hu Zhihua,Shi Qingnan,Cai Yi, et al. Low temperature deposition of p-type nc-Si:H thin films for superstrate a-Si:H based p-i-n solar cells[OL].[ 8 May 2007] http://en.paper.edu.cn/en_releasepaper/content/12680


	8. Effect of thickness on properties of MgB2 films
	Zhuang Chenggang ,Ding Lili ,Chen Liping ,Zhang Kaicheng ,Chen Jingping,Jia Zhang,Feng Qingrong ,Gan Zizhao
	Physics 04 January 2006
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	Abstract:Superconducting MgB2 films on sapphire substrate have been fabricated by the method of hybrid physical-chemical vapor deposition (HPCVD). The film thickness ranges from 75 nm to 3 um. Sample with a thickness of 1.3 um has a Tc(onset) = 40.3 K and ΔTc = 0.15 K. The critical current density, Jc(5 K, 0 T) was estimated, according to the Bean model, as 5.6×105 A/cm2. With the thickness exceeding 1 um, the texture of crystallites and superconducting properties became worse. For the thickness of 3 um, it exhibits a transition at 39.2 K and a width of 0.5 K with Jc(5 K,0 T) = 6.3×105 A/cm2. The investigation indicates that optimum deposition thickness ranges from several hundred nanometers to one micron. This demonstrates that the HPCVD is a simple but effective technique for the application in the production of MgB2 wires
	TO cite this article:Zhuang Chenggang ,Ding Lili ,Chen Liping , et al. Effect of thickness on properties of MgB2 films[OL].[ 4 January 2006] http://en.paper.edu.cn/en_releasepaper/content/4864

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