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1. Structural, stability and electronic properties of BinPm clusters
  Wanting Shen,Dan Liang,Liyuan Wu,Pengfei Lu
  Physics 12 November 2017
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2. Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy
  GE Xiaotian,WANG Dengkui,GAO Xian,FANG Xuan,NIU Shouzhu,GAO Hongyi,TANG Jilong,WANG Xiaohua,WEI Zhipeng,CHEN Rui
  Physics 27 November 2016
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3. Apodized Grating Coupler Using Fully-etched Nanostructures
  WU Hua,LI Chong,LI Zhiyong,GUO Xia
  Physics 02 December 2015
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4. Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth
  LIN Guangyang,LAN Xiaoling,WANG Chen,CHEN Chaowen,CHNE Ningli,LI Cheng,CHEN Songyan,HUANG Wei,LAI Hongkai
  Physics 13 November 2015
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5. Influence of ion- implantation on the effective Schottky barrier height of NiGe/n-Ge contacts
  Li Cheng,Tang Mengrao,Lin Guangyang,Huang Wei,Wang Chen
  Physics 12 November 2015
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6. The structural and optical properties of Be-doped GaAs grown by MBE
  Huimin Jia,Zhipeng Wei,Liang Chang,Dan Fang,Jilong Tang,Xuan Fang,Xiaohua Wang,Xiaohui Ma
  Physics 29 July 2014
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7. The electrical characteristics of GaAs-MgO interfaces of GaAs MIS Schottky diodes
  Gao Xian,Tang Jinglong,Fang Dan,Wang Shuangpeng,Zhao Haifeng,Wei Zhipeng,Fang Xuan,Wang Xiaohua,Xu Zhikun,Ma Xiaohui
  Physics 26 July 2014
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8. The surface and photoluminescence properties of GaAs passivated by wet chemical method
  Chen Fang,Tang Jilong,Liu Guojun,Wei Zhipeng,Fang Dan,Gao Xian,Xu Zhikun,Fang Xuan,Ma Xiaohui,Wang Xiaohua
  Physics 22 July 2014
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9. Theoretical analysis of the double-layer emitter with different doping concentrations for a-Si:H/c-Si heterojunction solar cells
  HUANG Haibin,GAO Jiang,Wolfgang R. Fahrner,ZHOU Lang
  Physics 14 April 2014
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10. High quality Si doped Al0.49Ga0.51N grown on AlN/AlGaN superlattice with MOCVD
  LI Yang,CHEN Shengchang,FANG Yanyan,LI Senlin,TIAN Wu,DAI Jiangnan,WU Zhihao,CHEN Changqing
  Physics 04 March 2013
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