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There are 22 papers published in subject: > since this site started. |
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1. Quantum Transport Simulations of α-In2Se3 Antiferroelectric Tunnel Junctions | |||
Zhang Lingxue,Zhang Jiaxin,Sun Yuxuan,Li Wei,Quhe Ruge | |||
Physics 08 March 2024 | |||
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Abstract:Due to semiconductor characteristics and non-volatile ferroelectricity, two-dimensional (2D) In2Se3 are considered as potential candidates for next-generation storage and computing devices. Based on first principles calculations, we designed antiferroelectric tunnel junctions (AFTJs) using α-In2Se3 as channels. The tunneling barrier height is controlled by the antiferroelectric to ferroelectric (AFE-FE) phase transition of the channel. A maximum current ratio up to 426 is predicted between the AFE and FE phases, enabling the two distinct memory states. By constructing two AFTJs into a calculation unit, the total current can either be fully turned on/off or function as XNOR logic with bias as inputs. Our research provides a new approach to implementing integrated storage and computing devices, making it possible for efficient data centric applications in the era of big data. | |||
TO cite this article:Zhang Lingxue,Zhang Jiaxin,Sun Yuxuan, et al. Quantum Transport Simulations of α-In2Se3 Antiferroelectric Tunnel Junctions[OL].[ 8 March 2024] http://en.paper.edu.cn/en_releasepaper/content/4762525 |
2. Resistance switching characteristic of Ag/Fe2O3/MoS2/Ag with very low switching voltage | |||
SHU Haiyan,HE Chaotao,ZHANG Xingwen,LI Shichang,CHEN Peng | |||
Physics 28 November 2023 | |||
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Abstract:In this paper,the resistive switching characteristics of Ag/Fe2O3/MoS2/Ag multilayer film deposited on ITO by magnetron sputtering are investigated.The Ag/Fe2O3/MoS2/Ag device exhibits superior resistive switching behavior compared to the device without Fe2O3 layer due to the positive effect of oxygen vacancies in Fe2O3 on the formation of conducting filaments. The resistive switching ratio of the device is close to 7.0 × 105. The current value of the device drops sharply at 0.12 V when the voltage is swept forward, and the device switches from HRS back to LRS at -0.28 V when a voltage of opposite polarity is applied.The I-V curves of the device are fitted in double logarithmic coordinates, and it is found that the device is controlled by an ohmic conduction model in the low resistance state and two conduction models in the high resistance state: in the low bias region, which exhibits ohmic conduction, and at higher voltages, which is controlled by the SCLC conduction model. Such a resistive switching characteristic with very low switching voltage and high resistance ratio is of particular importance in the application of resistive stochastic storage. | |||
TO cite this article:SHU Haiyan,HE Chaotao,ZHANG Xingwen, et al. Resistance switching characteristic of Ag/Fe2O3/MoS2/Ag with very low switching voltage[OL].[28 November 2023] http://en.paper.edu.cn/en_releasepaper/content/4761573 |
3. Quantum Transport Simulations of a Proposed Logic In-Memory Device Based on Bipolar Magnetic Semiconductor | |||
Ke Yunzhe,Yin Guoxue,Zhang Lingxue,Li Wei,Quhe Ruge | |||
Physics 20 March 2023 | |||
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Abstract:To overcome the memory wall based on the von Neumann architecture, in-memory computing has been intensively studied as a potential solution. Recently, a new type of spintronic material, namely bipolar magnetic semiconductors (BMSs), draw much attention because of its opposite spin-polarized valence and conduction bands and thus facilitates electrically tunable spin transport. Here, we propose a novel logic-in-memory device with a traditional field effect transistor (FET) configuration by making use of the ferromagnetic and semiconducting features of BMSs simultaneously. Two represented BMSs (2H-VS2 and semihydrogenated graphene) are selected as the channel of FETs and the transport properties of these devices have been investigated by using ab initio quantum transport simulations. The spin polarization of the current reaches up to 98%, enabling the device to provide an ideal spin polarization signal. The distinct electronic structures under the two magnetic states and the electrically tunable spin polarization allow the devices to perform logic operations directly in situ. Two-input NAND and OR logic and non-volatile NOR logic gates can be realized with one and two BMS FETs, respectively, efficiently decreasing the integration density of logical circuits. This work provides a new route to realize fused storage and computing functions in a single transistor. | |||
TO cite this article:Ke Yunzhe,Yin Guoxue,Zhang Lingxue, et al. Quantum Transport Simulations of a Proposed Logic In-Memory Device Based on Bipolar Magnetic Semiconductor[OL].[20 March 2023] http://en.paper.edu.cn/en_releasepaper/content/4759823 |
4. Structural, stability and electronic properties of BinPm clusters | |||
Wanting Shen,Dan Liang,Liyuan Wu,Pengfei Lu | |||
Physics 12 November 2017 | |||
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Abstract:An in-depth investigation is performed on stability mechanisms and electronic properties of III-V semiconductor vapor phases clusters. First principles electronic structure calculations of CAM-B3LYP are performed on neutral BinPm (n+m ≤ 14) clusters. The geometrical evolution of all stable structures remain amorphous as the clusters size increases. Binding energies, energy gains and HOMO-LUMO gaps confirm that all four-atom structures of BinPm clusters have more stable optical properties. Orbitals composition of the stable clusters are analyzed. Our calculations will contribute to the study of diluted bismuth alloys and compounds. | |||
TO cite this article:Wanting Shen,Dan Liang,Liyuan Wu, et al. Structural, stability and electronic properties of BinPm clusters[OL].[12 November 2017] http://en.paper.edu.cn/en_releasepaper/content/4741869 |
5. Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy | |||
GE Xiaotian,WANG Dengkui,GAO Xian,FANG Xuan,NIU Shouzhu,GAO Hongyi,TANG Jilong,WANG Xiaohua,WEI Zhipeng,CHEN Rui | |||
Physics 27 November 2016 | |||
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Abstract:GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs was grown by molecular beam epitaxy. Temperature and excitation power dependent photoluminescence (PL) of the MQWs were investigated in detail. The PL spectra showed a unique emission evolution. Two competitive peaks were observed from 40 to 90 K in temperature dependent PL spectra. The peak located at low energy shoulder was confirmed to be localized states emission (LE) by the long tail and the inverted S-shaped emission band width obtained from the temperature dependent emission. The high energy side peak was confirmed to be free carrier emission by Varshni equation fitting. It is observed that the LE peak exhibited blue shift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. As a result, the localized states in GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs have been confirmed and explained by carrier dynamics. | |||
TO cite this article:GE Xiaotian,WANG Dengkui,GAO Xian, et al. Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy[OL].[27 November 2016] http://en.paper.edu.cn/en_releasepaper/content/4711855 |
6. Apodized Grating Coupler Using Fully-etched Nanostructures | |||
WU Hua,LI Chong,LI Zhiyong,GUO Xia | |||
Physics 02 December 2015 | |||
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Abstract:A 2-dimensional apodized grating coupler for interfacing between single-mode ?bers and photonic circuits on silicon-on-insulator is demonstrated. The grating coupler with grating grooves are realized by columns of fully etched nanostructures, with the feasibility of digitally tailoring the effective refractive index of each groove in order to obtain the Gaussian-like output diffractive mode in order to enhance the coupling efficiency to the optical fiber. Compared with the uniform grating couplers, the coupling efficiency of the apodized grating couplers increased by 4.3% and 5.7%, respectively, for the nanoholes and nanorectangles as refractive index tuning layer. | |||
TO cite this article:WU Hua,LI Chong,LI Zhiyong, et al. Apodized Grating Coupler Using Fully-etched Nanostructures[J]. |
7. Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth | |||
LIN Guangyang,LAN Xiaoling,WANG Chen,CHEN Chaowen,CHNE Ningli,LI Cheng,CHEN Songyan,HUANG Wei,LAI Hongkai | |||
Physics 13 November 2015 | |||
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Abstract:Strain in germanium (Ge) and germanium-on-insulator (GOI) stripes with SiNx capping layer was modulated through varying stripe width and NH3/SiH4 gas ratio for growth of SiNx. It was found that tensile strain increases with augment of stripe width for Ge stripes, while decreases for GOI stripes. The divergence is attributable to higher strain relaxation in SiNx capping layer for Ge stripes and larger strain loss into SiO2 and Si substrate for GOI stripes as stripe width increase. Silicon nitride capping layers deposited at smaller NH3/SiH4 ratio result in larger tensile strain in Ge layer, which can be attributed to rich Si-H bonds in the SiNx layer. | |||
TO cite this article:LIN Guangyang,LAN Xiaoling,WANG Chen, et al. Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth[OL].[13 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661255 |
8. Influence of ion- implantation on the effective Schottky barrier height of NiGe/n-Ge contacts | |||
Li Cheng,Tang Mengrao,Lin Guangyang,Huang Wei,Wang Chen | |||
Physics 12 November 2015 | |||
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Abstract:The mechanism to modulate the effective Schottky barrier height of NiGe/Ge contacts with impurity incorporation is still under debate. We experimentally demonstrate that ion implant damages, rather than interface passivation, play a dominant role in lowering the effective Schottky barrier height of NiGe/n-Ge contacts in the case of selenium and silicon implantation. Selenium segregated at the interface between NiGe and Ge acts as neither donor nor passivator for alleviation of Fermi- level pinning effect to greatly influence on the electrical characteristics. It is rather different from the role of phosphorus, which segregates at the interface leading to good ohmic behavior for the NiGe/n-Ge contacts by narrowing Schottky barrier. Si doping in Ge slightly increases the effective barrier height of the NiGe/n-Ge contacts. | |||
TO cite this article:Li Cheng,Tang Mengrao,Lin Guangyang, et al. Influence of ion- implantation on the effective Schottky barrier height of NiGe/n-Ge contacts[OL].[12 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661258 |
9. The structural and optical properties of Be-doped GaAs grown by MBE | |||
Huimin Jia,Zhipeng Wei,Liang Chang,Dan Fang,Jilong Tang,Xuan Fang,Xiaohua Wang,Xiaohui Ma | |||
Physics 29 July 2014 | |||
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Abstract: In this paper, Be-doped GaAs were grown by molecular beam epitaxy (MBE), by changing Be resource temperature, we obtained different doping concentration GaAs samples. The morphologies and electrics properties of the samples were investigated by AFM and Hall measurement. Especially, in low temperature and temperature dependent PL spectra, the Be acceptor related emission were recognized, with the doping concentration increasing, the Be acceptor related emission enhanced too. | |||
TO cite this article:Huimin Jia,Zhipeng Wei,Liang Chang, et al. The structural and optical properties of Be-doped GaAs grown by MBE[OL].[29 July 2014] http://en.paper.edu.cn/en_releasepaper/content/4604845 |
10. The electrical characteristics of GaAs-MgO interfaces of GaAs MIS Schottky diodes | |||
Gao Xian,Tang Jinglong,Fang Dan,Wang Shuangpeng,Zhao Haifeng,Wei Zhipeng,Fang Xuan,Wang Xiaohua,Xu Zhikun,Ma Xiaohui | |||
Physics 26 July 2014 | |||
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Abstract:Many researches pay attention to the metal-semiconductor interface barrier height, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouse wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by MBE on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using Atomic Layer Deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-woltage(I-V) characteristics. Experimental result shown that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase. | |||
TO cite this article:Gao Xian,Tang Jinglong,Fang Dan, et al. The electrical characteristics of GaAs-MgO interfaces of GaAs MIS Schottky diodes[OL].[26 July 2014] http://en.paper.edu.cn/en_releasepaper/content/4604839 |
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