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1. Evaluation of the Chip-level Thermal Uniformity for Semiconductor Devices | |||
ZHANG Guangchen,FENG Shiwei,LI Jingwan,LIU Jing,ZHOU Zhou | |||
Electrics, Communication and Autocontrol Technology 09 June 2011 | |||
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Abstract:In this paper, a method to evaluate the chip-level thermal uniformity of semiconductor devices by electrical transient thermal response testing is proposed. It's found that the degree of the chip's thermal non-uniformity presents a monotonic increasing relationship with the height of the first step of heating response curves. This phenomenon is observed both in a 3-dimensional transient thermal simulation based on the finite element method (FEM) and transient thermal measurements by electrical temperature sensitive parameter (TSP) method. Chip's surface temperature distributions under different current distributions are also measured by infrared image method and the thermal spectrum method is adopted to analyze the temperature non-uniformity quantitatively. The relationship between the degree of temperature non-uniformity and current distribution is consistent with the result of our proposed method. | |||
TO cite this article:ZHANG Guangchen,FENG Shiwei,LI Jingwan, et al. Evaluation of the Chip-level Thermal Uniformity for Semiconductor Devices[OL].[ 9 June 2011] http://en.paper.edu.cn/en_releasepaper/content/4431958 |
2. Evolution of photocurrent during coadsorption of Cs and O on GaAs (100) | |||
Zou Jijun ,Chang Benkang | |||
Electrics, Communication and Autocontrol Technology 03 January 2009 | |||
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Abstract:The photocurrent and spectral response curves of gallium arsenide (GaAs) photocathodes have been obtained by a multi-information measurement system, and the evolution of the photocurrent has been investigated as a function of the Cs:O flux ratio. The experimental results show that the photocurrent increases approximately exponentially after the first exposure to Cs until a maximum sensitivity is reached, the detailed evolution process and the ultimate photocurrent being different for different samples. These differences are analyzed in this study, and according to the process of coadsorption of Cs and oxygen on GaAs, an equation is presented to explain the increase of photocurrent. | |||
TO cite this article:Zou Jijun ,Chang Benkang . Evolution of photocurrent during coadsorption of Cs and O on GaAs (100) [OL].[ 3 January 2009] http://en.paper.edu.cn/en_releasepaper/content/27202 |
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