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1. Growth of Vertically Stacked Two-Dimensional Materials: An Analytical vdW-BCF Model | |||
Xinshuang Xiang,Han Ye | |||
Electrics, Communication and Autocontrol Technology 16 March 2021 | |||
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Abstract:The mechanism of spontaneous vertical versus in-plane lateral growth of two-dimensional (2D) materials is of great importance to fabricate novel 2D hetero- and homostructures. In this paper, we build a vdW-BCF growth model for vertically stacked 2D materials based on diffusion equations with boundary conditions from thermodynamic equilibrium and mass conservation. General solutions are analytically obtained for bilayer 2D materials (initial Layer1 and subsequent Layer2), taking adsorption and desorption into consideration. As the increase of Layer1 size, the Layer2 growth velocity decreases first and then increases due to the flux adsorption on the Layer1. Two critical sizes of Layer1 may exist for Layer2 to grow. Meanwhile, growth of Layer2 becomes unlimited if Layer2 size reaches a critical value. Moreover, the model can describe the size evolution as the growth process and we demonstrate that initial sizes plays a crucial role in determining the final structure. | |||
TO cite this article:Xinshuang Xiang,Han Ye. Growth of Vertically Stacked Two-Dimensional Materials: An Analytical vdW-BCF Model[OL].[16 March 2021] http://en.paper.edu.cn/en_releasepaper/content/4754168 |
2. First-principle Study on Transport Properties of 2D Janus NbSeTe-MoSeTe-NbSeTe Lateral Heterostructure | |||
ZHENG Yanan,YE Han | |||
Electrics, Communication and Autocontrol Technology 11 March 2021 | |||
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Abstract:Two dimensional transition metal chalcogenides have important application prospects in optoelectronic devices, energy storage, catalysis and other fields due to their excellent properties. The research on this material covers its electronic properties, optical properties and so on, but the related research on transport properties is less. The electronic properties and applications of materials largely depend on their crystal structures. In this project, the first principles density functional theory and non-equilibrium Green\'s function are used to calculate the quantum transport of NbSeTe- MoSeTe- NbSeTe transport structure, and we study its electronic transport properties. By applying bias voltage to the electrode, the difference of transmission coefficient under different bias voltage and the relationship between current and bias voltage are discussed. By the means of analyzing the transmission spectrum of the non-equilibrium state of the device, we can understand the quantum transport properties of non-equilibrium state. When the bias voltage is less than 60mV, the transmission coefficient spectrum has no obvious change; while in 80mV or 100mV, it becomes larger having a positive effect on the current. | |||
TO cite this article:ZHENG Yanan,YE Han. First-principle Study on Transport Properties of 2D Janus NbSeTe-MoSeTe-NbSeTe Lateral Heterostructure[OL].[11 March 2021] http://en.paper.edu.cn/en_releasepaper/content/4754044 |
3. More accurate estimation of the linewidth of energy level dispersion in GaAs based Semiconductor Heterostructures | |||
KONG Xinyu,REN Xiaomin,LIU Hao,WANG Qi,LIU Kai,HUANG Yongqing | |||
Electrics, Communication and Autocontrol Technology 03 April 2020 | |||
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Abstract:As a new advancement of the theory of fractional dimensionality of electron states architecture in semiconductor heterostructure physics, more accurate estimation of the linewidth of energy level dispersion in GaAs based semiconductor heterostructures at a temperature of 300K has been made by adopting a modified energy level dispersion function featuring an asymmetric lineshape and the relevant dimensional similarity functions modified mainly by introducing a novel concept of quantization baseline of density of states. It is determined as about 0.00221eV, which is in the same order of magnitude with the previous result, but about 10% larger than that. This work may magnify the impact of the fractional dimensionality theory on the development of semiconductor quantum electronics and optoelectronics and even that of fundamental physics. | |||
TO cite this article:KONG Xinyu,REN Xiaomin,LIU Hao, et al. More accurate estimation of the linewidth of energy level dispersion in GaAs based Semiconductor Heterostructures[OL].[ 3 April 2020] http://en.paper.edu.cn/en_releasepaper/content/4751465 |
4. A simplified layer-by-layer transfer process towards high-quality multilayer graphene electrode fabrication | |||
Dong Wang?,*,1,Jing Ning1,Qin Lu1,Meishan Mu1,Yue Hao1,Jincheng Zhang1,* | |||
Electrics, Communication and Autocontrol Technology 08 December 2015 | |||
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Abstract:In this paper we present a high-quality multilayer graphene electrode fabrication using a simplified layer-by-layer transfer progress.we use highly purified methane as carbon source at 1030℃ to synthesis high-quality monolayer graphene by chemical vapor deposition. The coverage of monolayer graphene is more than 90% and carrier mobility is much higher than 300cm2/Vs with the transparent of 97%.during the transfer process,we use simplified layer-by-layer transfer technology to fabricate high-quality multi-layer(4~5) graphene transparent conductive film and the optical tansmittance of 5 layer graphene tansparent conductive film is high than 87.5%(550nm).The excellent surface and roughness is indicate by AFM and SEM.To further demonstrate availability of 5-layer graphene tranparent conductive,we use electon beam evaporation to prepare high-property solar cells based on P3HT:PCBM transport layer and graphene/MoO3.The analysis of current-voltage characteristic indicates that graphene transparent conductive film obviously improve the solar cells' electical conductivty. | |||
TO cite this article:Dong Wang?,*,1,Jing Ning1,Qin Lu1, et al. A simplified layer-by-layer transfer process towards high-quality multilayer graphene electrode fabrication[OL].[ 8 December 2015] http://en.paper.edu.cn/en_releasepaper/content/4669079 |
5. Effects of ultraviolet light on electrical properties of PEDOT:PSS film | |||
Xing Yingjie,Qian Minfang,Wang Guiwei,Zhang Gengmin,Guo Dengzhu | |||
Electrics, Communication and Autocontrol Technology 06 February 2013 | |||
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Abstract:The performance of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film is highly dependent on its in organic optoelectronic devices Conductivity and work function. Significant improvements of conductivity and work function are achieved by irradiation of PEDOT:PSS film in vacuum under 254 nm ultraviolet light. The mechanism for such an improvement is investigated by current-voltage measurement, X-ray photo electron energy spectrum and atomic force microscopy. A surface degradation and the composition change are found after ultraviolet irradiation. The height of the injection barrier in a hole-only device fabricated with UV-treated PEDOT:PSS film is decreased effectively. Our results reveal that UV treatment is capable of modifying the conductivity and work function of PEDOT:PSS film thus allowing them be tuned to the device application. | |||
TO cite this article:Xing Yingjie,Qian Minfang,Wang Guiwei, et al. Effects of ultraviolet light on electrical properties of PEDOT:PSS film[OL].[ 6 February 2013] http://en.paper.edu.cn/en_releasepaper/content/4520604 |
6. Influence of neutron irradiation on persistent photonconductivity in GaN | |||
ZHANG Minglan,Di Zhaoting,YANG Ruixia | |||
Electrics, Communication and Autocontrol Technology 14 November 2012 | |||
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Abstract:Unintentionally doped GaN films grown by MOCVD were irradiated with neutron at room temperature. In order to investigate the influence of neutron irradiation, persistent photoconductivity (PPC) and low temperature photoluminescence (PL) measurements were carried out. Pronounced PPC is observed, and yellow luminescence (YL) band is not be detected by PL measurement at 5K, suggesting that PPC and YL are not related. Moreover, PPC phenomena has been enhanced by neutron irradiation and quenched by the followed annealing process at 900 C. The possible origin of PPC in GaN is discussed. | |||
TO cite this article:ZHANG Minglan,Di Zhaoting,YANG Ruixia. Influence of neutron irradiation on persistent photonconductivity in GaN[OL].[14 November 2012] http://en.paper.edu.cn/en_releasepaper/content/4494811 |
7. Structural and optical properties of Cr-doped semi-insulating GaN epilayers | |||
Mei Fei ,Wu Kemin,Pan Yang,Han Tao,Liu Chang | |||
Electrics, Communication and Autocontrol Technology 24 March 2010 | |||
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Abstract:The properties of Cr-doped semi-insulating GaN epilayers grown by rf-plasma-assisted molecular beam epitaxy were studied. The deep acceptor nature of Cr was used to grow semi-insulating GaN epilayers on sapphire substrates for electronic device applications. The room-temperature (RT) sheet resistivity of the epilayers reached 1010 Ω/square. The activation energy of the dark conductivity was about 0.48 eV. Step-graded AlxGa1-xN/GaN (x=0.3-0.2) superlattices (SLs) were designed to filter dislocations. Transmission electron microscopy images showed that the SLs can dramatically reduce the dislocation density. Al0.35Ga0.65N/GaN heterostructure grown on the Cr-doped semi-insulating GaN epilayer exhibited a RT mobility of 960 cm2/Vs and sheet carrier density of 2.1×1013 cm-2. | |||
TO cite this article:Mei Fei ,Wu Kemin,Pan Yang, et al. Structural and optical properties of Cr-doped semi-insulating GaN epilayers[OL].[24 March 2010] http://en.paper.edu.cn/en_releasepaper/content/41068 |
8. P-type ZnO Conversion through Gold Alloy Method | |||
Zhang Jingwen,Wang Hongbo,Hou Xun | |||
Electrics, Communication and Autocontrol Technology 29 November 2006 | |||
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Abstract:ZnO films were grown on Sapphire and n-type Silicon, and then deposited a gold film in some areas. After heat treatments in the air through gold alloy technics, they were employed to some electrical measurements. After treatment at the temperature of 850°C, ZnO, grown on sapphire and under gold layer, displayed super high resistivity. It seemed that the ZnO, grown on n-Si and under gold layer, displayed p-type conductivity, for diode-like I-V rectifying characteristics were observed between it and n-Si, and the ZnO layer, which was not deposited gold film. During the course of I-V characteristics measurement, the sample, grown on the n-Si and post treated at 750°C, appeared overflow twice, and then was observed stable rectifying characteristic. But the sample post treated at 650°C and lower temperature, was not observed rectifying characteristic. Farther experiment researches require to carried out. | |||
TO cite this article:Zhang Jingwen,Wang Hongbo,Hou Xun. P-type ZnO Conversion through Gold Alloy Method[OL].[29 November 2006] http://en.paper.edu.cn/en_releasepaper/content/10023 |
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