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	1. First-principle Study on Transport Properties of 2D Janus NbSeTe-MoSeTe-NbSeTe Lateral Heterostructure
	ZHENG Yanan,YE Han
	Electrics, Communication and Autocontrol Technology 11 March 2021
	Show/Hide Abstract \| Cite this paper︱Full-text: PDF (0 B)

	Abstract:Two dimensional transition metal chalcogenides have important application prospects in optoelectronic devices, energy storage, catalysis and other fields due to their excellent properties. The research on this material covers its electronic properties, optical properties and so on, but the related research on transport properties is less. The electronic properties and applications of materials largely depend on their crystal structures. In this project, the first principles density functional theory and non-equilibrium Green\'s function are used to calculate the quantum transport of NbSeTe- MoSeTe- NbSeTe transport structure, and we study its electronic transport properties. By applying bias voltage to the electrode, the difference of transmission coefficient under different bias voltage and the relationship between current and bias voltage are discussed. By the means of analyzing the transmission spectrum of the non-equilibrium state of the device, we can understand the quantum transport properties of non-equilibrium state. When the bias voltage is less than 60mV, the transmission coefficient spectrum has no obvious change; while in 80mV or 100mV, it becomes larger having a positive effect on the current.
	TO cite this article:ZHENG Yanan,YE Han. First-principle Study on Transport Properties of 2D Janus NbSeTe-MoSeTe-NbSeTe Lateral Heterostructure[OL].[11 March 2021] http://en.paper.edu.cn/en_releasepaper/content/4754044


	2. More accurate estimation of the linewidth of energy level dispersion in GaAs based Semiconductor Heterostructures
	KONG Xinyu,REN Xiaomin,LIU Hao,WANG Qi,LIU Kai,HUANG Yongqing
	Electrics, Communication and Autocontrol Technology 03 April 2020
	Show/Hide Abstract \| Cite this paper︱Full-text: PDF (0 B)

	Abstract:As a new advancement of the theory of fractional dimensionality of electron states architecture in semiconductor heterostructure physics, more accurate estimation of the linewidth of energy level dispersion in GaAs based semiconductor heterostructures at a temperature of 300K has been made by adopting a modified energy level dispersion function featuring an asymmetric lineshape and the relevant dimensional similarity functions modified mainly by introducing a novel concept of quantization baseline of density of states. It is determined as about 0.00221eV, which is in the same order of magnitude with the previous result, but about 10% larger than that. This work may magnify the impact of the fractional dimensionality theory on the development of semiconductor quantum electronics and optoelectronics and even that of fundamental physics.
	TO cite this article:KONG Xinyu,REN Xiaomin,LIU Hao, et al. More accurate estimation of the linewidth of energy level dispersion in GaAs based Semiconductor Heterostructures[OL].[ 3 April 2020] http://en.paper.edu.cn/en_releasepaper/content/4751465


	3. A simplified layer-by-layer transfer process towards high-quality multilayer graphene electrode fabrication
	Dong Wang?,,1,Jing Ning1,Qin Lu1,Meishan Mu1,Yue Hao1,Jincheng Zhang1,
	Electrics, Communication and Autocontrol Technology 08 December 2015
	Show/Hide Abstract \| Cite this paper︱Full-text: PDF (0 B)

	Abstract:In this paper we present a high-quality multilayer graphene electrode fabrication using a simplified layer-by-layer transfer progress.we use highly purified methane as carbon source at 1030℃ to synthesis high-quality monolayer graphene by chemical vapor deposition. The coverage of monolayer graphene is more than 90% and carrier mobility is much higher than 300cm2/Vs with the transparent of 97%.during the transfer process,we use simplified layer-by-layer transfer technology to fabricate high-quality multi-layer(4~5) graphene transparent conductive film and the optical tansmittance of 5 layer graphene tansparent conductive film is high than 87.5%(550nm).The excellent surface and roughness is indicate by AFM and SEM.To further demonstrate availability of 5-layer graphene tranparent conductive,we use electon beam evaporation to prepare high-property solar cells based on P3HT:PCBM transport layer and graphene/MoO3.The analysis of current-voltage characteristic indicates that graphene transparent conductive film obviously improve the solar cells' electical conductivty.
	TO cite this article:Dong Wang?,*,1,Jing Ning1,Qin Lu1, et al. A simplified layer-by-layer transfer process towards high-quality multilayer graphene electrode fabrication[OL].[ 8 December 2015] http://en.paper.edu.cn/en_releasepaper/content/4669079

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