Authentication email has already been sent, please check your email box: and activate it as soon as possible.
You can login to My Profile and manage your email alerts.
If you haven’t received the email, please:
|
|
There are 42 papers published in subject: > since this site started. |
Select Subject |
Select/Unselect all | For Selected Papers |
Saved Papers
Please enter a name for this paper to be shown in your personalized Saved Papers list
|
1. Growth of Vertically Stacked Two-Dimensional Materials: An Analytical vdW-BCF Model | |||
Xinshuang Xiang,Han Ye | |||
Electrics, Communication and Autocontrol Technology 16 March 2021 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:The mechanism of spontaneous vertical versus in-plane lateral growth of two-dimensional (2D) materials is of great importance to fabricate novel 2D hetero- and homostructures. In this paper, we build a vdW-BCF growth model for vertically stacked 2D materials based on diffusion equations with boundary conditions from thermodynamic equilibrium and mass conservation. General solutions are analytically obtained for bilayer 2D materials (initial Layer1 and subsequent Layer2), taking adsorption and desorption into consideration. As the increase of Layer1 size, the Layer2 growth velocity decreases first and then increases due to the flux adsorption on the Layer1. Two critical sizes of Layer1 may exist for Layer2 to grow. Meanwhile, growth of Layer2 becomes unlimited if Layer2 size reaches a critical value. Moreover, the model can describe the size evolution as the growth process and we demonstrate that initial sizes plays a crucial role in determining the final structure. | |||
TO cite this article:Xinshuang Xiang,Han Ye. Growth of Vertically Stacked Two-Dimensional Materials: An Analytical vdW-BCF Model[OL].[16 March 2021] http://en.paper.edu.cn/en_releasepaper/content/4754168 |
2. First-principle Study on Transport Properties of 2D Janus NbSeTe-MoSeTe-NbSeTe Lateral Heterostructure | |||
ZHENG Yanan,YE Han | |||
Electrics, Communication and Autocontrol Technology 11 March 2021 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:Two dimensional transition metal chalcogenides have important application prospects in optoelectronic devices, energy storage, catalysis and other fields due to their excellent properties. The research on this material covers its electronic properties, optical properties and so on, but the related research on transport properties is less. The electronic properties and applications of materials largely depend on their crystal structures. In this project, the first principles density functional theory and non-equilibrium Green\'s function are used to calculate the quantum transport of NbSeTe- MoSeTe- NbSeTe transport structure, and we study its electronic transport properties. By applying bias voltage to the electrode, the difference of transmission coefficient under different bias voltage and the relationship between current and bias voltage are discussed. By the means of analyzing the transmission spectrum of the non-equilibrium state of the device, we can understand the quantum transport properties of non-equilibrium state. When the bias voltage is less than 60mV, the transmission coefficient spectrum has no obvious change; while in 80mV or 100mV, it becomes larger having a positive effect on the current. | |||
TO cite this article:ZHENG Yanan,YE Han. First-principle Study on Transport Properties of 2D Janus NbSeTe-MoSeTe-NbSeTe Lateral Heterostructure[OL].[11 March 2021] http://en.paper.edu.cn/en_releasepaper/content/4754044 |
3. More accurate estimation of the linewidth of energy level dispersion in GaAs based Semiconductor Heterostructures | |||
KONG Xinyu,REN Xiaomin,LIU Hao,WANG Qi,LIU Kai,HUANG Yongqing | |||
Electrics, Communication and Autocontrol Technology 03 April 2020 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:As a new advancement of the theory of fractional dimensionality of electron states architecture in semiconductor heterostructure physics, more accurate estimation of the linewidth of energy level dispersion in GaAs based semiconductor heterostructures at a temperature of 300K has been made by adopting a modified energy level dispersion function featuring an asymmetric lineshape and the relevant dimensional similarity functions modified mainly by introducing a novel concept of quantization baseline of density of states. It is determined as about 0.00221eV, which is in the same order of magnitude with the previous result, but about 10% larger than that. This work may magnify the impact of the fractional dimensionality theory on the development of semiconductor quantum electronics and optoelectronics and even that of fundamental physics. | |||
TO cite this article:KONG Xinyu,REN Xiaomin,LIU Hao, et al. More accurate estimation of the linewidth of energy level dispersion in GaAs based Semiconductor Heterostructures[OL].[ 3 April 2020] http://en.paper.edu.cn/en_releasepaper/content/4751465 |
4. Novel UV photodetector based on in-situ grown n-GaN nanowires array/p-GaNhomojunction | |||
Zhicheng Wang,Shaoteng Wu,Liancheng wang,Chengmin Wang,Hui Zhang,Deping Xiong,Ning Zhu,Zhiqiang Liu,Xiaoyan Yi,Junxi Wang,Jinmin Li,Miao He | |||
Electrics, Communication and Autocontrol Technology 10 May 2017 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:We successfully demonstrated a novel gallium nitride (GaN) nanowire (NW)/p-GaNhomojunction UV photodetector via in-situ grown vertical well-aligned (GaN) nanowires grown on p-GaN/sapphire by vapor-liquid-solid (VLS) process. The length of GaN nanowires was in the range of 2-3μm and the diameter was in the range 200-300 nm. The current-voltage curve of the homojunction demonstrates obvious rectifying diode behavior in a dark environment. Under UV light (365nm,mercury lamp), the current was almost 6 times larger than that in dark current at -1 V. Continuous measurements indicate the reproducibility and stability of this homojunctionphotodetector. | |||
TO cite this article:Zhicheng Wang,Shaoteng Wu,Liancheng wang, et al. Novel UV photodetector based on in-situ grown n-GaN nanowires array/p-GaNhomojunction[OL].[10 May 2017] http://en.paper.edu.cn/en_releasepaper/content/4732637 |
5. Effects of nitrous oxide and nitrogen plasma treatment on the indium-tin-oxide anode of organic light-emitting diodes | |||
Liang Qiao,Miao He,Hui Zhang,Chengmin Wang,Shuwen Zheng,Shuti Li | |||
Electrics, Communication and Autocontrol Technology 10 May 2017 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:In this paper, the surface of the indium-tin-oxide (ITO) anode of an organic light-emitting diodes (OLED) device was treated by N2O or N2 gas in a plasma enhanced chemical vapor deposition (PECVD) instrument. Compared to the non-treated OLED device, the treatment by the N2O plasma improved the characteristics of OLED device, while the treatment by the N2 plasma worsened the characteristics of OLED device. On the optimized experimental condition, the turn-on voltage of the N2O plasma treated OLED (8.6 V) was lower than that of the OLED without plasma treated ones (11.1 V). In addition, the luminance of the OLED with its ITO anode surface treated by the N2O plasma was improved to 50 cd/m2, higher than the 42 cd/m2 of the untreated OLED. | |||
TO cite this article:Liang Qiao,Miao He,Hui Zhang, et al. Effects of nitrous oxide and nitrogen plasma treatment on the indium-tin-oxide anode of organic light-emitting diodes[OL].[10 May 2017] http://en.paper.edu.cn/en_releasepaper/content/4732646 |
6. Numerical Investigation on the Relationship between the Atomic Weigh and the Interface Thermal Conductivity of Aluminum/Cooper Composite Interface in Nanoscale Situation | |||
GE Daohan | |||
Electrics, Communication and Autocontrol Technology 25 April 2017 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:The interfacial thermal conductivity of Aluminum/Copper interface is systematic studied based on non-equilibrium molecular dynamics (NEMD) method by considering the atomic migration and atomic weight under different temperatures. An interesting phenomenon is discovered that the interfacial thermal conductivity is effect by the atomic weight of each materials. The thermal conductivity of the materials with small atomic weight is larger than that of the materials with large atomic weight in the interface heat transfer. The contribution of aluminum and copper to the interface thermal conductivity is inversely proportional. This investigation is helpful for understanding the interface heat transfer mechanism of the interface structures, which also implies a potential method for the analysis of the interface thermal performance and design of the interface structures. | |||
TO cite this article:GE Daohan. Numerical Investigation on the Relationship between the Atomic Weigh and the Interface Thermal Conductivity of Aluminum/Cooper Composite Interface in Nanoscale Situation[OL].[25 April 2017] http://en.paper.edu.cn/en_releasepaper/content/4729420 |
7. A simplified layer-by-layer transfer process towards high-quality multilayer graphene electrode fabrication | |||
Dong Wang?,*,1,Jing Ning1,Qin Lu1,Meishan Mu1,Yue Hao1,Jincheng Zhang1,* | |||
Electrics, Communication and Autocontrol Technology 08 December 2015 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:In this paper we present a high-quality multilayer graphene electrode fabrication using a simplified layer-by-layer transfer progress.we use highly purified methane as carbon source at 1030℃ to synthesis high-quality monolayer graphene by chemical vapor deposition. The coverage of monolayer graphene is more than 90% and carrier mobility is much higher than 300cm2/Vs with the transparent of 97%.during the transfer process,we use simplified layer-by-layer transfer technology to fabricate high-quality multi-layer(4~5) graphene transparent conductive film and the optical tansmittance of 5 layer graphene tansparent conductive film is high than 87.5%(550nm).The excellent surface and roughness is indicate by AFM and SEM.To further demonstrate availability of 5-layer graphene tranparent conductive,we use electon beam evaporation to prepare high-property solar cells based on P3HT:PCBM transport layer and graphene/MoO3.The analysis of current-voltage characteristic indicates that graphene transparent conductive film obviously improve the solar cells' electical conductivty. | |||
TO cite this article:Dong Wang?,*,1,Jing Ning1,Qin Lu1, et al. A simplified layer-by-layer transfer process towards high-quality multilayer graphene electrode fabrication[OL].[ 8 December 2015] http://en.paper.edu.cn/en_releasepaper/content/4669079 |
8. High Performance FPGA Implementation of SNOW 3G Stream Cipher Using High-Level Synthesis | |||
LI Guangxu,AN Jianfeng,FAN Xiaoya | |||
Electrics, Communication and Autocontrol Technology 04 December 2014 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:SNOW 3G forms the heart of secure algorithm sets in 3GPP LTE-Advanced, which is used for protection of data over the wireless mobile communication device and embedded devices and has formed integrity protection algorithms. The maximum throughput and resource utilization is one hot research in the FPGA implementation of Snow 3G. In this paper, we propose an implementation method based on high-level synthesis to optimize the recursive function MULxPOW and the SBox operation in Snow 3G algorithm. The results show that the high-level synthesis method is flexible than RTL HDL implementation, and the frequency is higher than the best commercial IP core. | |||
TO cite this article:LI Guangxu,AN Jianfeng,FAN Xiaoya. High Performance FPGA Implementation of SNOW 3G Stream Cipher Using High-Level Synthesis[OL].[ 4 December 2014] http://en.paper.edu.cn/en_releasepaper/content/4621322 |
9. Chemical Bond Polarity-driven Memristive Effects in Ge2Sb2Te5 Films | |||
SUN Huajun,XIE Song,LI Renjie | |||
Electrics, Communication and Autocontrol Technology 02 December 2013 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:Devices based on Ge2Sb2Te5 films are fabricated and demonstrate memristive effect following electroforming process, On the contrary, the full amorphous state and the full crystalline state could not demostrate the memristive effect because the electroforming process was indispensable. However nanoscale full amorphous capacitor-like cell also demonstrated the memristive effect if the electric field impact was huge enough. Therefore, the memristive effect is attributed to the polarity and the strength of electric field impacting chemical bond, which results in reversible covalent-electrovalent bands transform. | |||
TO cite this article:SUN Huajun,XIE Song,LI Renjie. Chemical Bond Polarity-driven Memristive Effects in Ge2Sb2Te5 Films[OL].[ 2 December 2013] http://en.paper.edu.cn/en_releasepaper/content/4572477 |
10. Bipolar and unipolar resistive switching mode in Zr-doped ZnO thin film for multi-bit resistance random access memory | |||
XU Dinglin,TANG Minghua,ZENG Baiwen,XIAO Yongguang | |||
Electrics, Communication and Autocontrol Technology 18 November 2013 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:In this work, we report the coexistence of the bipolar and unipolar resistive switching mode in Pt/Zn0.99Zr0.01O/Pt structure device. After the forming process, this device with URS behavior shows either URS mode in the same direction or BRS mode in the opposite directions during the reset process. By controlling different compliance currents (Icc) and the span of voltage sweeping in the reset process (Vstop), controllable multi-state resistances in low resistance states and high resistance states for the BRS mode were demonstrated. The reliability results indicate that our devices have high potential for the next generation nonvolatile memories application. | |||
TO cite this article:XU Dinglin,TANG Minghua,ZENG Baiwen, et al. Bipolar and unipolar resistive switching mode in Zr-doped ZnO thin film for multi-bit resistance random access memory[OL].[18 November 2013] http://en.paper.edu.cn/en_releasepaper/content/4570062 |
Select/Unselect all | For Selected Papers |
Saved Papers
Please enter a name for this paper to be shown in your personalized Saved Papers list
|
|
About Sciencepaper Online | Privacy Policy | Terms & Conditions | Contact Us
© 2003-2012 Sciencepaper Online. unless otherwise stated