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There are 42 papers published in subject: > since this site started. |
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1. Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs | |||
Wang Wei,Sun Jianping,Gu Ning | |||
Electrics, Communication and Autocontrol Technology 06 June 2006 | |||
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Abstract:We use a quantum-mechanical model to study the gate tunneling current of Hf-based high-k dielectric films for nanoscale MOSFETs. The three-dimensional gate current component evaluation is performed by the traveling wave calculations for the thermionic emission, Fowler-Nordheim (FN) tunneling, and direct tunneling through the oxide barrier. For the two-dimensional gate current component originated from the subbands in the inversion layers, a transmission calculation is performed. Various Hf-based high-k structures and materials of interest have been examined and compared to access the reduction of gate current in these structures. Effects of nitrogen content, hafnium content, aluminum content, and interfacial layer (IL) on the gate tunneling current have been studied theoretically. Our results show that the reduction of the gate tunneling current can be optimized in terms of the nitrogen content, aluminum content, and the composition of the IL. Our computational results are in very good agreement with experimental data. | |||
TO cite this article:Wang Wei,Sun Jianping,Gu Ning. Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs[OL].[ 6 June 2006] http://en.paper.edu.cn/en_releasepaper/content/6965 |
2. Atomistic Simulation on Ion Implantation and Annealing | |||
Min Yu,Ru Huang,Xing Zhang | |||
Electrics, Communication and Autocontrol Technology 12 December 2005 | |||
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Abstract:A reliable and efficient molecular dynamics program to simulate the low energy ion implantation is developed. The newest physical models are included and some efficient algorithms are used to conduct realistic and accurate simulations. By comparing the simulation results with the SIMS data for B, As and P, the program is verified. An atomistic model for annealing simulation is presented. The simulation is carried out for RTA annealing after B implantation. Agreements between simulation and SIMS data are achieved and both BED and TED phenomena are characterized. | |||
TO cite this article:Min Yu,Ru Huang,Xing Zhang. Atomistic Simulation on Ion Implantation and Annealing[OL].[12 December 2005] http://en.paper.edu.cn/en_releasepaper/content/4299 |
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