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1. Performance Improvement of Oxide Thin-Film Transistors by a Two-Step-Annealing Method | |||
Li Min,Lan Linfeng,Xu Miao,Xu hua,Luo Dongxiang,Xiao Peng,Yao Rihui,Peng Junbiao | |||
Electrics, Communication and Autocontrol Technology 04 February 2013 | |||
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Abstract:In this paper, thin-film transistor (TFT) with indium zinc oxide (IZO) channel layer was fabricated using a two-step-annealing method. The device showed better uniformity and better stability under positive bias stress, negative bias illumination stress, and temperature stress, compared to those with only one annealing step. The falling rate of this device was as high as 0.593 eV/V, showing that trap states in the channel were greatly reduced by the two-step-annealing process. | |||
TO cite this article:Li Min,Lan Linfeng,Xu Miao, et al. Performance Improvement of Oxide Thin-Film Transistors by a Two-Step-Annealing Method[OL].[ 4 February 2013] http://en.paper.edu.cn/en_releasepaper/content/4519284 |
2. Influence of neutron irradiation on persistent photonconductivity in GaN | |||
ZHANG Minglan,Di Zhaoting,YANG Ruixia | |||
Electrics, Communication and Autocontrol Technology 14 November 2012 | |||
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Abstract:Unintentionally doped GaN films grown by MOCVD were irradiated with neutron at room temperature. In order to investigate the influence of neutron irradiation, persistent photoconductivity (PPC) and low temperature photoluminescence (PL) measurements were carried out. Pronounced PPC is observed, and yellow luminescence (YL) band is not be detected by PL measurement at 5K, suggesting that PPC and YL are not related. Moreover, PPC phenomena has been enhanced by neutron irradiation and quenched by the followed annealing process at 900 C. The possible origin of PPC in GaN is discussed. | |||
TO cite this article:ZHANG Minglan,Di Zhaoting,YANG Ruixia. Influence of neutron irradiation on persistent photonconductivity in GaN[OL].[14 November 2012] http://en.paper.edu.cn/en_releasepaper/content/4494811 |
3. A 3.4dB NF k-band LNA in 65nm CNOS Technology | |||
Xu Jianfei,Yan Na | |||
Electrics, Communication and Autocontrol Technology 28 September 2012 | |||
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Abstract:This paper introduces a design method for k-band (18-26.5 GHz) LNA with best noise performance. Then a k-band LNA is designed following the design method in 65-nm CMOS mixed signal process. The LNA has a peak gain of 20.46 dB at 22.45 GHz and a 3 dB bandwidth of 3.8 GHz. The S11 is better than -11 dB and S22 better than -15 dB across the band. The measured smallest noise figure (NF) is 3.4 dB. The whole chip consumes 11mA current under 1.1V supply voltage and occupies an area of 710 μm × 540 μm. | |||
TO cite this article:Xu Jianfei,Yan Na. A 3.4dB NF k-band LNA in 65nm CNOS Technology[OL].[28 September 2012] http://en.paper.edu.cn/en_releasepaper/content/4489736 |
4. Evolution of photocurrent during coadsorption of Cs and O on GaAs (100) | |||
Zou Jijun ,Chang Benkang | |||
Electrics, Communication and Autocontrol Technology 03 January 2009 | |||
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Abstract:The photocurrent and spectral response curves of gallium arsenide (GaAs) photocathodes have been obtained by a multi-information measurement system, and the evolution of the photocurrent has been investigated as a function of the Cs:O flux ratio. The experimental results show that the photocurrent increases approximately exponentially after the first exposure to Cs until a maximum sensitivity is reached, the detailed evolution process and the ultimate photocurrent being different for different samples. These differences are analyzed in this study, and according to the process of coadsorption of Cs and oxygen on GaAs, an equation is presented to explain the increase of photocurrent. | |||
TO cite this article:Zou Jijun ,Chang Benkang . Evolution of photocurrent during coadsorption of Cs and O on GaAs (100) [OL].[ 3 January 2009] http://en.paper.edu.cn/en_releasepaper/content/27202 |
5. ESD Protection for HDMI Interfaces | |||
Liu Xiaohao,Yang Jie | |||
Electrics, Communication and Autocontrol Technology 24 March 2008 | |||
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Abstract:The HDMI 1.3 specification supports the demand of future HD display devices for higher resolution and higher frame rates with a color depth up to 48-bit by doubling bandwidth from 165 MHz (4.95 Gbps) to 340 MHz (10.2 Gbps) of the previous HDMI 1.2 specification. The hot-plugging capability of HDMI ports makes ESD protection a must. In this paper, various ESD protection options are investigated, and a fully-integrated interface IC providing highest ESD- and back drive protection as well as the required level shifting for the I睠, CEC and hot-plug lines is presented. | |||
TO cite this article:Liu Xiaohao,Yang Jie. ESD Protection for HDMI Interfaces[OL].[24 March 2008] http://en.paper.edu.cn/en_releasepaper/content/19646 |
6. Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs | |||
Wang Wei,Sun Jianping,Gu Ning | |||
Electrics, Communication and Autocontrol Technology 06 June 2006 | |||
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Abstract:We use a quantum-mechanical model to study the gate tunneling current of Hf-based high-k dielectric films for nanoscale MOSFETs. The three-dimensional gate current component evaluation is performed by the traveling wave calculations for the thermionic emission, Fowler-Nordheim (FN) tunneling, and direct tunneling through the oxide barrier. For the two-dimensional gate current component originated from the subbands in the inversion layers, a transmission calculation is performed. Various Hf-based high-k structures and materials of interest have been examined and compared to access the reduction of gate current in these structures. Effects of nitrogen content, hafnium content, aluminum content, and interfacial layer (IL) on the gate tunneling current have been studied theoretically. Our results show that the reduction of the gate tunneling current can be optimized in terms of the nitrogen content, aluminum content, and the composition of the IL. Our computational results are in very good agreement with experimental data. | |||
TO cite this article:Wang Wei,Sun Jianping,Gu Ning. Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs[OL].[ 6 June 2006] http://en.paper.edu.cn/en_releasepaper/content/6965 |
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