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	1. A 0.9V High Precision CMOS Voltage Reference Without Operational Amplifier
	Chen Sunwen,Ma Xiaoyu,Wang Qian
	Electrics, Communication and Autocontrol Technology 16 September 2013
	Show/Hide Abstract \| Cite this paper︱Full-text: PDF (0 B)

	Abstract:A low power high precision CMOS voltage reference without operational amplifier is designed. It is based on sub-threshold MOSFETs and on compensating a proportional to absolute temperature (PTAT) based current, which varies with the emitter-base voltage of a PNP transistor. It has high power supply rejection ratio (PSRR) and a low power consumption, achieving a minimum supply voltage of 0.9 V. The voltage reference circuit was simulated by the tool of HSPICE with TSMC 0.18um technology. The variation of the output reference voltage is 1mV/V for supply voltage from 0.9V to 3V. The temperature coefficient is 18ppm/ C with the supply voltage range from 0.9V to 3V and the temperature range from -10 C to 110 C. The core circuit consumes 15.5uW at room temperature at 1V.
	TO cite this article:Chen Sunwen,Ma Xiaoyu,Wang Qian. A 0.9V High Precision CMOS Voltage Reference Without Operational Amplifier[OL].[16 September 2013] http://en.paper.edu.cn/en_releasepaper/content/4560366


	2. A Simulation and Experimental Study for improving thermal reliability of P-i-N power diodes
	Jia Yunpeng,Wu Yu,Hu Dongqing
	Electrics, Communication and Autocontrol Technology 25 February 2013
	Show/Hide Abstract \| Cite this paper︱Full-text: PDF (0 B)

	Abstract:In this paper, the temperature dependence modes in modern p-i-n power diodes is investigated. Resorting to therotical derivation, an inversion point of temperature coefficiency TK in current-voltage characteristics of p-i-n power diodes is proved to exist. Semiconductor device simulations are used in order to determine the parameters which influence temperature coefficiency TK. Both simulation and experimental results show that a positive temperature coefficiency TK for forward voltage drop VF in interesting current region is possible, if the relating parameters is moderately adjusted. With a SEM microgragh technique, the structure of the experimental samples were measured.
	TO cite this article:Jia Yunpeng,Wu Yu,Hu Dongqing. A Simulation and Experimental Study for improving thermal reliability of P-i-N power diodes[OL].[25 February 2013] http://en.paper.edu.cn/en_releasepaper/content/4523193

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