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	1. A low-stress, elastic and improved hardness hydrogenated amorphous carbon film
	Wang Qi,He Deyan,Zhang Junyan
	Physics 27 July 2013
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	Abstract:The evolution of hydrogenated amorphous carbon films with fullerene-like microstructure was investigated with the proportion of hydrogen in introduction. The results showed that the films deposited at hydrogen flow rate 50sccm exhibited lower compressive stress (lower 48.6%), higher elastic recovery (higher 19.6%, near elastic recovery rate 90%) and higher hardness (higher 7.4%) than the films deposited without hydrogen introduction. Structural analysis showed the film had relatively high sp2 content and low bonded hydrogen content possessed high hardness, elastic recovery rate and low compressive stress. It was attributed to the curved graphite microstructure, which can form three-dimensional covalently bonded network.
	TO cite this article:Wang Qi,He Deyan,Zhang Junyan. A low-stress, elastic and improved hardness hydrogenated amorphous carbon film[J].


	2. Low-roughness and easily-etched transparent conducting oxides with a stack structure of ITO and IZO
	Xu Hua,Lan Linfeng,Xu Miao,Luo Dongxiang,Li Min,Xiao Peng,Yao Rihui,Peng Junbiao
	Physics 29 March 2013
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	Abstract:Indium tin Oxide (ITO) thin film is hard to be etched in wet etchants because of the crystalline state. To obtain easily-etched transparent conductor oxide (TCO), a layer of ultra-thin indium-zinc oxide (IZO) was inserted between ITO films. It was found that the as-deposition TCO film with IZO insertion layers was amorphous and easily-etched by oxalic. Furthermore, the surface roughness of this multilayer TCO film was only 0.52 nm, much lower than that of the ITO monolayer film with the same thickness. After annealing at 250 degree in air, a low sheet resistance of ~10 Ω/□ and a reasonably transmittance of ~85% in visible range film were obtained.
	TO cite this article:Xu Hua,Lan Linfeng,Xu Miao, et al. Low-roughness and easily-etched transparent conducting oxides with a stack structure of ITO and IZO[OL].[29 March 2013] http://en.paper.edu.cn/en_releasepaper/content/4534443


	3. Effect of total pressure on crystallinity of boron carbon nitride thin films deposited by RF magnetron sputtering
	Gong Enle,Yu Jie,Liu Yi
	Physics 08 October 2008
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	Abstract:Boron carbon nitride (BCN) thin films were deposited on silicon substrates by radio frequency(13.56MHz)magnetron sputtering from hexagonal boron nitride (h-BN) and graphite targets. Deposited BCN thin films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy (RS) and X-ray photoelectron spectroscopy (XPS). The growth total pressure ranged from 0.2 to 6.0Pa. The deposition total pressure was observed to have significant effect on the composition and crystallinity of BCN films. Full width at half maximum (FWHM) of BCN thin films changed with the total pressure increase and better crystallinity was observed for thin films prepared at 1.0Pa.
	TO cite this article:Gong Enle,Yu Jie,Liu Yi. Effect of total pressure on crystallinity of boron carbon nitride thin films deposited by RF magnetron sputtering[OL].[ 8 October 2008] http://en.paper.edu.cn/en_releasepaper/content/24603

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